Sn-Containing Photoresist Composition for EUV Sensitivity and Low LER

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Solution Overview

Problem

Current chemically amplified photoresists face challenges in achieving high sensitivity, resolution, and reduced line edge roughness (LER) for small feature sizes in EUV lithography due to intrinsic image blurring and acid catalyzed reactions, with existing inorganic photoresists having issues with shelf-life stability and development requirements.

Innovation Solution

A semiconductor photoresist composition comprising an Sn-containing organometallic compound, a carboxylic acid compound, and at least one of a sulfonic acid or phosphonic acid compound, along with a solvent, to enhance sensitivity and LER characteristics.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If chemically amplified photoresists are used to achieve high sensitivity, then sensitivity is improved, but line edge roughness increases and resolution deteriorates due to acid catalyzed reactions

Engineering Contradiction:

ImprovesensitivityVSAvoidline edge roughness

Core Design Contradiction:

Use of energy by moving objectVSManufacturing precision

Solution Approach 1:

The patent replaces the chemical amplification mechanism (acid catalyzed reactions) with a direct photolysis mechanism. The photoresist composition uses a photopolymer that undergoes direct photochemical reaction upon EUV exposure, eliminating the need for acid catalysts and their associated blurring effects, thereby achieving both high sensitivity and low line edge roughness

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent changes the fundamental reaction mechanism parameter from chemical amplification to direct photolysis. By selecting specific photopolymer materials and adjusting the photoresist composition to enable direct photochemical crosslinking or chain scission, the system achieves high sensitivity without the LER deterioration caused by acid diffusion and catalysis

Inventive Principle:

Principle #35Parameter changes

2Use of energy by moving object

If chemically amplified photoresists are used to achieve high sensitivity, then sensitivity is improved, but resolution deteriorates due to intrinsic image blurring

Engineering Contradiction:

ImprovesensitivityVSAvoidresolution

Core Design Contradiction:

Use of energy by moving objectVSMeasurement precision

Solution Approach 1:

The patent substitutes the chemical amplification process with a direct photolytic process. The photopolymer composition is designed to undergo immediate and localized photochemical reaction upon EUV exposure, eliminating the acid catalyzed reaction chain that causes intrinsic image blurring, thereby achieving high resolution with maintained sensitivity

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

3Manufacturing precision

If inorganic photoresists are used to reduce line edge roughness, then LER is improved, but shelf-life stability deteriorates

Engineering Contradiction:

Improveline edge roughnessVSAvoidshelf-life stability

Core Design Contradiction:

Manufacturing precisionVSStability of the object's composition

Solution Approach 1:

The patent employs a composite photoresist system combining photopolymer base materials with specific additives and stabilizers. This composite formulation provides both the low LER characteristics of inorganic-like photoresists and the shelf-life stability of organic photoresists, achieving a balance between performance and stability

Inventive Principle:

Principle #40Composite materials

4Adaptability or versatility

If traditional CA photoresists are used for EUV lithography, then compatibility is improved, but light absorbance decreases at 13.5 nm wavelength

Engineering Contradiction:

ImprovecompatibilityVSAvoidlight absorbance

Core Design Contradiction:

Adaptability or versatilityVSUse of energy by moving object

Solution Approach 1:

The patent changes the chemical composition parameters of the photoresist to enhance EUV light absorbance. By selecting photopolymer materials with appropriate atomic number elements and optimizing the molecular structure, the photoresist achieves high absorbance at 13.5 nm wavelength while maintaining compatibility with EUV lithography processes

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The composition achieves excellent sensitivity and reduced LER, enabling the formation of fine patterns with high resolution and stability, suitable for EUV lithography.

Implementation Method 1

active research has been conducted for molecules containing tin that have excellent absorption of extreme ultraviolet rays

Methodology Applied

Scientific EffectPhotoelectric effect: Photoelectric Effect

Implementation Method 2

alkyl ligands are dissociated by light absorption and/or secondary electrons produced thereby, and are crosslinked with adjacent chains through oxo bonds

Methodology Applied

Scientific EffectCrosslinking: Chemical Bonding

Data Source

PatentUS20250216779A1Semiconductor photoresist composition and method of forming patterns using the composition

Publication Date: 2025.07.03 SAMSUNG SDI CO LTD

AI summary

Disclosed are a semiconductor photoresist composition and a method of forming patterns using the same, the semiconductor photoresist composition including an Sn-containing organometallic compound; a carboxylic acid compound; at least one selected from a sulfonic acid compound and a phosphonic acid compound; and a solvent.