Snorkel Structure for Non-Contact Semiconductor Failure Analysis
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Solution Overview
Problem
As semiconductor devices become more complex, the accuracy of detecting defects worsens, making it challenging to effectively identify and address failures in integrated circuits.
Innovation Solution
The implementation of a snorkel structure in semiconductor devices that allows for the transmission of output signals to a topmost conductive layer, enabling the use of charged particle beams for non-invasive failure analysis by detecting the potential of the conductive layer without direct contact, thereby facilitating accurate defect detection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional failure analysis methods are used on complex semiconductor devices, then the analysis process can be performed, but the accuracy of detecting defects deteriorates
Solution Approach 1:
The patent segments the semiconductor device into distinct functional regions by introducing separate front-side signal paths and backside power delivery networks. This segmentation allows independent analysis of signal integrity and power distribution, enabling accurate defect detection despite overall device complexity.
Solution Approach 2:
The patent introduces an intermediary analysis approach by using charged particle beams to detect potentials at conductive layers without direct physical contact or invasion. This intermediary method enables non-destructive measurement that maintains signal integrity while analyzing complex device structures.
2Measurement precision
If direct contact methods are used to detect potential, then measurement can be performed, but the analysis becomes invasive and may interfere with device operation
Solution Approach 1:
The patent employs charged particle beams as an intermediary detection mechanism that can sense electrical potentials through the conductive layers without making direct contact. This non-invasive approach allows accurate potential measurement while avoiding interference with device operation or signal paths.
Solution Approach 2:
The patent replaces traditional mechanical contact-based measurement methods with a field-based detection approach using charged particle beams. This substitution eliminates the need for physical contact probes, thereby removing the harmful effects of invasiveness while maintaining measurement precision.
3Power
If backside power delivery networks are present, then power can be delivered to the device, but they interfere with accurate defect detection
Solution Approach 1:
The patent segments the device architecture into separate front-side signal transmission paths and backside power delivery networks. This spatial segmentation allows power to be delivered effectively through the backside while preventing interference with the signal paths used for defect detection on the front side.
Solution Approach 2:
The patent applies local quality by optimizing different regions of the device for different functions: the front side is optimized for signal transmission and defect detection with minimal interference, while the back side is optimized for power delivery. This localized optimization allows both power delivery and accurate detection to coexist.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise and non-destructive failure analysis by transmitting output signals through the snorkel structure, allowing for the detection of defects in semiconductor devices without interference from backside power delivery networks, thus improving the accuracy of defect identification.
Implementation Method 1
The topmost conductive layer is configured to receive a first charged particle beam and reflect the first charged particle beam as a second charged particle beam based on a second potential of the topmost conductive layer
Data Source
AI summary
A semiconductor device includes a cell coupled between the output terminal of the first scan flip-flop circuit and the input terminal of the second scan flip-flop circuit. The cell has a plurality of logic gates. The semiconductor device also includes a snorkel structure having a first conductive structure and a second conductive structure. The first conductive structure is connected to the output terminal of the first scan flip-flop circuit. The second conductive structure has a topmost conductive layer buried in a dielectric layer of the semiconductor device.