SOI Semiconductor Structure with Embedded Doped Layer
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Solution Overview
Problem
Conventional semiconductor structures with SOI substrates experience back side bias effects due to charge coupling above the oxide layer when voltage is applied to the bottom substrate, affecting electric field distribution and device properties.
Innovation Solution
A semiconductor structure with a doped layer embedded in the semiconductor layer and a contact structure extending into the semiconductor layer, electrically connected to the doped layer, which discharges coupled charges and allows voltage adjustment from the front side, reducing the back side bias effect.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If voltage is applied to the bottom substrate of a conventional SOI device, then the device can operate, but charges are coupled above the oxide layer causing back side bias effect that degrades device performance
Solution Approach 1:
The patent extracts the harmful charge coupling effect by introducing a dedicated discharge path through the doped layer and contact structure. This allows the coupled charges to be removed from the oxide layer, eliminating the back side bias effect while maintaining normal device operation.
Solution Approach 2:
The doped layer acts as an intermediary component between the buried oxide layer and the contact structure. It facilitates the discharge of coupled charges by providing a conductive path, thereby mediating the removal of the harmful back side bias effect without interfering with the normal semiconductor device operation.
2Object-affected harmful factors
If a doped layer and contact structure are added to discharge coupled charges, then the back side bias effect is reduced, but the device structure becomes more complex
Solution Approach 1:
The patent merges the charge discharge function with existing device structures. The doped layer is integrated within the semiconductor layer, and the contact structure is combined with the existing contact architecture, allowing the back side bias effect to be reduced without significantly increasing overall device complexity.
Solution Approach 2:
The contact structure serves multiple functions: it provides electrical connection to the semiconductor device and simultaneously enables charge discharge from the buried oxide layer. This multi-functionality reduces the need for separate dedicated discharge structures, thereby limiting the increase in device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces or eliminates the back side bias effect, enabling improved electric field distribution and device performance while allowing for voltage adjustment from the front side, enhancing operational efficiency and flexibility.
Implementation Method 1
charges are coupled above the oxide layer (i.e. the back side bias effect), which affects the electric field distribution of the device
Data Source
AI summary
The present disclosure relates to a semiconductor structure. The semiconductor structure includes a semiconductor-on-insulator (SOI) substrate having a bottom substrate, a buried oxide layer disposed on the bottom substrate, and a semiconductor layer disposed on the buried oxide layer. The semiconductor structure further includes a doped layer embedded in the semiconductor layer and above the buried oxide layer, and a contact structure extending into the semiconductor layer from the top surface of the semiconductor layer. The contact structure is electrically connected to the doped layer.