SOI Devices With Embedded Permanent Charge For Breakdown Voltage
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Solution Overview
Problem
Conventional semiconductor-on-insulator devices face challenges in achieving low specific on-resistance and capacitances while maintaining high breakdown voltage, particularly in new applications where reduced surface field structures do not meet the increasing requirements.
Innovation Solution
The integration of permanent charge at the upper and/or lower interfaces of the drift region in lateral semiconductor-on-insulator devices provides charge balance, resulting in a more uniform electric field and higher breakdown voltage by terminating electric field lines from ionized doping atoms, thereby reducing the electric field between the drain and source regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If permanent charge is embedded at the semiconductor-dielectric interface, then breakdown voltage is improved, but device complexity increases
Solution Approach 1:
The patent changes the physical parameter of the dielectric layer by embedding permanent charge within it. This modifies the electrical characteristics of the dielectric, creating a uniform electric field that extends into the semiconductor and terminates field lines from ionized doping atoms, thereby increasing breakdown voltage without fundamental structural changes
Solution Approach 2:
The permanent charge embedded in the dielectric acts as an intermediary element that mediates between the ionized doping atoms in the semiconductor and the metal contact. It provides charge balance and terminates electric field lines, reducing the overall electric field strength in the drift region while maintaining device simplicity
2Reliability
If permanent charge is embedded at the semiconductor-dielectric interface, then specific on-resistance is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The patent modifies the electrical parameter of the dielectric layer by embedding permanent charge, which changes the electric field distribution in the drift region. This reduces the electric field strength and lowers specific on-resistance by providing charge balance, while the charge embedding process itself becomes the critical manufacturing step requiring precision
3Reliability
If permanent charge is embedded at the semiconductor-dielectric interface, then capacitances are reduced, but device complexity increases
Solution Approach 1:
The patent changes the electrical parameter of the dielectric layer by embedding permanent charge, which modifies the electric field distribution and reduces capacitances. The permanent charge creates a more uniform electric field that extends into the semiconductor, reducing the electric field between drain and source regions and thereby lowering device capacitances
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the breakdown voltage and reduces specific on-resistance and capacitances, making the devices suitable for advanced applications by ensuring effective charge balance and uniform electric fields.
Implementation Method 1
permanent charge embedded in a dielectric... providing charge balance, resulting in a more uniform electric field and higher breakdown voltage by terminating electric field lines from ionized doping atoms
Implementation Method 2
The permanent charge may induce an inversion layer in the drift region
Data Source
AI summary
A lateral SOI device may include a semiconductor channel region connected to a drain region by a drift region. An insulation region on the drift layer is positioned between the channel region and the drain region. Permanent charges may be embedded in the insulation region sufficient to cause inversion in the insulation region. The semiconductor layer also overlies a global insulation layer, and permanent charges are preferably embedded in at least selected areas of this insulation layer too.