SOI Resistive Element Layout for Stable Resistance and Low TCR

The patent applies local quality by creating a resistive element with non-uniform thickness distribution. Specifically, the resistive element has a first region with a first thickness and a second region with a second thickness different from the first thickness. This localized variation in thickness allows optimization of resistance values in specific areas without increasing the overall area of the resistive element, thereby resolving the contradiction between maintaining resistance stability and reducing area occupation.

The patent implements local quality by establishing different impurity concentration distributions in different regions of the resistive element. The first region has a first impurity concentration and the second region has a second impurity concentration, where the impurity concentrations are differently distributed. This regional differentiation allows each region to contribute differently to the overall resistance characteristics, enabling optimization of resistance values while controlling the temperature coefficient of resistance through coordinated design of multiple regions with varying impurity profiles.

The patent applies the merging principle by integrating the formation of multiple regions with different thicknesses and impurity concentrations into a single continuous manufacturing process. The resistive element is formed as an integrated structure comprising the first region and second region in one process flow, rather than requiring separate fabrication steps for each region. This consolidation achieves complex resistive element characteristics with optimized precision while avoiding the cost increase that would result from multiplying discrete manufacturing steps.