SOI Substrate Wiring Layout for Uniform LED Emission and Protection

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Current semiconductor light emitting devices face challenges in achieving uniform light emission with high efficiency and are prone to element destruction due to protective elements, necessitating a solution that enhances both light emission efficiency and protective functionality.

Innovation Solution

A semiconductor light emitting device and supporting substrate configuration featuring a semiconductor light emitting laminate with conductive type layers and a protective element, integrated with an SOI substrate and wiring electrodes, which includes mounting electrodes and via electrodes for improved heat dissipation and protective circuit functionality.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a protective element is formed on the back surface of the light emitting element mounted on a resin carrier, then the light emitting element is protected, but the light emission uniformity and efficiency deteriorate

Engineering Contradiction:

Improveprotective elementVSAvoidlight emission uniformity

Core Design Contradiction:

ReliabilityVSIllumination intensity

Solution Approach 1:

The protective element is extracted from the resin carrier and transferred to the semiconductor substrate itself. The semiconductor substrate is designed with a protective layer on its back surface and a protective element (such as a Zener diode) integrated into the semiconductor layers, separating the protective function from the optical path and improving light emission uniformity.

Inventive Principle:

Principle #2Taking out (Extraction)

Solution Approach 2:

The semiconductor substrate acts as an intermediary between the light emitting element and the protective element. It provides a stable mounting base, electrical connection, and thermal pathway while integrating the protective element in a way that does not interfere with light emission, thus mediating between protection requirements and optical performance.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Reliability

If a protective element is provided on the mounting substrate, then the light emitting element is protected, but the light emission efficiency deteriorates

Engineering Contradiction:

Improveprotective elementVSAvoidlight emission efficiency

Core Design Contradiction:

ReliabilityVSLoss of energy

Solution Approach 1:

The protective element is merged with the semiconductor substrate structure rather than being separately mounted. The protective layer and protective element are integrated into the semiconductor layers during fabrication, combining the light emitting and protective functions in a unified structure that maintains high light emission efficiency.

Inventive Principle:

Principle #5Merging (Combining)

3Reliability

If a protective element is provided in a semiconductor substrate, then the light emitting element is protected, but element destruction occurs due to the protective element

Engineering Contradiction:

Improveprotective elementVSAvoidelement destruction

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The protective element is designed with specific local properties such as a Zener diode structure with controlled breakdown voltage. The protective layer is positioned specifically on the back surface of the semiconductor substrate, providing localized protection that prevents element destruction while maintaining overall device reliability.

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The configuration enables high-output semiconductor light emitting devices with uniform light emission and reduced risk of element destruction, while also improving heat dissipation and facilitating circuit wiring, thereby enhancing overall performance and reliability.

Implementation Method 1

an SOI substrate that is formed of an upper semiconductor layer, a lower semiconductor layer, and an interlayer insulating film provided between the upper semiconductor layer and the lower semiconductor layer

Methodology Applied

Scientific EffectHeat conduction: Conduction (thermal)

Implementation Method 2

a first mounting electrode that is provided on the lower semiconductor layer and connected to the at least one first wiring electrode by a first via electrode passing through the SOI substrate

Methodology Applied

Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS20240021767A1Semiconductor light emitting device and supporting substrate for semiconductor light emitting elements

Publication Date: 2024.01.18 STANLEY ELECTRIC CO LTD

AI summary

A semiconductor light emitting device includes a semiconductor light emitting laminate, and an SOI substrate including an upper semiconductor layer, an interlayer insulating film, and a lower semiconductor layer. The SOI substrate includes a first wiring electrode provided on the upper semiconductor layer through an insulating film and corresponding to a p-electrode, a second wiring electrode connected to the upper semiconductor layer and corresponding to an n-electrode, an anode that is provided on the lower semiconductor layer and connected to a first wiring electrode by a first via electrode passing through the SOI substrate, a cathode that is provided on the lower semiconductor layer through an insulating film and connected to the upper semiconductor layer by a second via electrode reaching the upper semiconductor layer. The p-electrode and the n-electrode are respectively bonded to the first wiring electrode and the second wiring electrode.