Solar Cell Recombination Layer for Carrier Extraction
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Solution Overview
Problem
The existing back contact solar cell configuration struggles to improve solar cell characteristics due to the electric field formed by the n-type semiconductor layer on the p-type semiconductor layer, leading to difficulties in carrier collection and efficiency.
Innovation Solution
Incorporating a recombination layer with many in-gap levels or a metal material for ohmic contact between the p-type and n-type amorphous semiconductor layers, along with a thin i-type amorphous semiconductor layer, to reduce resistance and inhibit opposite electric field formation, thereby enhancing carrier extraction and solar cell performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If an n-type semiconductor layer is formed on a p-type semiconductor layer, then the manufacturing process is simplified, but an opposite electric field is formed that deteriorates solar cell characteristics
Solution Approach 1:
A recombination layer is introduced as an intermediary between the n-type and p-type semiconductor layers. This recombination layer has many in-gap levels that facilitate carrier recombination and prevent the formation of an opposite electric field, thereby resolving the contradiction between manufacturing simplicity and solar cell performance
Solution Approach 2:
The conductivity type of the semiconductor layer is changed from n-type to intrinsic or weakly p-type in the region contacting the p-type layer. This parameter change prevents the formation of an opposite electric field while maintaining the simplified manufacturing process
2Loss of energy
If a recombination layer with many in-gap levels is introduced, then carrier collection loss is reduced, but device complexity increases
Solution Approach 1:
The recombination layer is formed by changing the conductivity type parameter of the semiconductor layer to intrinsic or weakly p-type, rather than introducing a completely new material layer. This reduces device complexity while still providing the necessary in-gap levels for carrier recombination
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces carrier collection loss and improves solar cell characteristics by facilitating low-resistance contact and efficient carrier extraction, leading to enhanced solar cell performance without increasing manufacturing costs.
Implementation Method 1
a recombination layer having many in-gap levels or a metal material in an ohmic contact with the p-type amorphous semiconductor layer
Implementation Method 2
a recombination layer having many in-gap levels or a metal material in an ohmic contact with the p-type amorphous semiconductor layer
Implementation Method 3
Solar cells can convert sunlight, which is clean and is available in unlimited amounts, directly into electricity
Data Source
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AI summary
A solar cell (100) includes a p-type amorphous semiconductor layer (11p), an n-type amorphous semiconductor layer (12n), and a recombination layer (R) interposed between the p-type amorphous semiconductor layer (11p) and the n-type amorphous semiconductor layer (12n).