Solder Bump Reflow Using Segmented Top-Down Heating
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Solution Overview
Problem
In semiconductor device production, the conventional reflow processing of solder bumps, where heating is applied from below, leads to uneven melting and increased likelihood of short circuits due to reduced spacing between bumps, as the superior and inferior portions melt at different times, causing thermal vibrations and potential contact between neighboring bumps.
Innovation Solution
A dual heating system is employed, where the superior portion of the bump is first heated to initiate melting, followed by heating the entire bump, ensuring homogeneous melting and preventing short circuits by maintaining a stable, spherical configuration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If heating is applied from below to melt solder bumps, then the bumps are melted and reflowed, but the superior and inferior portions melt at different times causing thermal vibrations and potential contact between neighboring bumps
Solution Approach 1:
The heating process is segmented into two distinct phases: first heating only the superior portion of the bump to initiate melting, then heating the inferior portion to complete the melting process. This segmentation ensures that the bump melts uniformly from top to bottom without thermal vibrations that could cause neighboring bumps to contact and create short circuits.
Solution Approach 2:
The superior portion of the bump is heated and melting is initiated before the inferior portion is heated. This preliminary action on the superior portion creates a controlled melting sequence that prevents sudden thermal expansion and vibration, thereby preventing contact between neighboring bumps.
2Productivity
If the distance between solder bumps is reduced for miniaturization, then high integration is achieved, but the likelihood of bump contact and short circuit increases
Solution Approach 1:
By segmenting the heating process into two stages (superior portion first, then inferior portion), the invention enables safe reduction of bump spacing. The controlled melting sequence prevents thermal vibrations that would otherwise cause contact between closely spaced bumps, allowing miniaturization without sacrificing reliability.
Solution Approach 2:
The heating parameters are changed from a single-source bottom-up approach to a two-stage top-then-bottom approach. This parameter change in the heating sequence allows for reduced bump pitch while maintaining reliability, as the controlled melting prevents the thermal vibrations that lead to short circuits.
3Temperature
If the bump is heated from below, then the entire bump is heated, but the melting timing difference between superior and inferior portions causes thermal vibration
Solution Approach 1:
Instead of heating from below as conventionally done, the invention inverts the heating sequence by first heating the superior portion and then the inferior portion. This inversion of the heating direction eliminates thermal vibrations and maintains bump shape stability during the melting process.
Solution Approach 2:
The superior portion is heated and melting is preliminarily initiated before the inferior portion is heated. This preliminary heating action creates a controlled melting front that moves smoothly from top to bottom, preventing thermal vibrations and maintaining shape stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach prevents short circuits and ensures reliable reflow of solder bumps, even at reduced spacings, meeting the demands of miniaturization and high integration in semiconductor devices and electronic components.
Implementation Method 1
first melting by heating only a superior portion of a bump formed on an electrode on one principle surface of a semiconductor substrate
Implementation Method 2
second melting the entire bump by also heating an inferior portion of the bump
Implementation Method 3
first melting by heating only a superior portion of a bump
Data Source
AI summary
A process for producing a semiconductor device, includes: first melting by heating only a superior portion of a bump formed on an electrode on one principle surface of a semiconductor substrate; and second melting the entire bump by also heating an inferior portion of the bump.


