Spin-Orbit Torque Element Thermal Management via Insulating Layers

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Spin-orbit torque wiring, used for magnetization reversal in magnetic memory elements, suffers from inferior thermal conductivity compared to traditional wiring materials, leading to increased temperature of ferromagnetic materials and reduced stability of magnetization, potentially causing write errors.

Innovation Solution

A spin-orbit torque type magnetization rotational element is designed with a configuration that includes a spin-orbit torque wiring surrounded by insulating layers with high thermal conductivity, such as silicon nitride, aluminum nitride, or aluminum oxide, and nonmagnetic metal layers positioned to efficiently dissipate heat, ensuring the center of gravity of the ferromagnetic layer is offset from the heat source, thereby stabilizing magnetization.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If spin-orbit torque wiring is used to induce large SOT in ferromagnetic material, then magnetization reversal efficiency is improved, but thermal conductivity is insufficient causing temperature increase and magnetization stability degradation

Engineering Contradiction:
Improvespin-orbit torque efficiencyVSAvoidferromagnetic material temperature
Core Design Contradiction:
PowerVSTemperature

Solution Approach 1:

The patent introduces a heat dissipation layer as an intermediary component between the spin-orbit torque wiring and the ferromagnetic material. This layer acts as a thermal mediator that conducts heat away from the ferromagnetic material, allowing the spin-orbit torque wiring to maintain high current density for effective magnetization reversal while preventing excessive temperature rise in the ferromagnetic material that would compromise magnetization stability.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Productivity

If current is applied to spin-orbit torque wiring for magnetization reversal, then writing capability is improved, but temperature increase causes write errors

Engineering Contradiction:
Improvewriting speedVSAvoidwrite accuracy
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The heat dissipation layer serves as a thermal intermediary that enables high-speed writing by conducting away the heat generated during current application. This allows the system to maintain high writing speed through efficient spin-orbit torque induction while preventing temperature-induced write errors, thus resolving the contradiction between productivity and reliability.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Force

If spin-orbit torque wiring with heavy metals is used, then SOT magnitude is increased, but thermal conductivity is reduced compared to traditional wiring

Engineering Contradiction:
Improvespin-orbit torque magnitudeVSAvoidthermal energy dissipation
Core Design Contradiction:
ForceVSLoss of energy

Solution Approach 1:

The patent segments the thermal management function from the spin-orbit torque generation function. The spin-orbit torque wiring (made of heavy metals with low thermal conductivity) is separated from the heat dissipation function by introducing a dedicated heat dissipation layer. This segmentation allows the wiring to optimize for high SOT magnitude while the separate layer handles thermal energy dissipation, resolving the contradiction between torque magnitude and energy loss.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The configuration enhances heat exhaustion properties, reducing the temperature of the ferromagnetic material and improving the stability of magnetization, thus minimizing write errors and extending the lifespan of magnetoresistance effect elements.

Implementation Method 1

A spin-orbit torque (SOT) is induced by a pure spin current generated by spin-orbit interaction or a Rashba effect at an interface between different materials

Methodology Applied
Scientific EffectSpin-orbit interaction:

Implementation Method 2

A spin-orbit torque (SOT) is induced by a pure spin current generated by spin-orbit interaction or a Rashba effect at an interface between different materials

Methodology Applied
Scientific EffectRashba effect:

Implementation Method 3

a method of writing (magnetization reversal) using a spin transfer torque (STT) generated by a current flowing in a stacking direction of a magnetoresistance effect element

Methodology Applied
Scientific EffectSpin transfer torque:

Implementation Method 4

a spin-orbit torque type magnetization rotational element is designed with a configuration that includes a spin-orbit torque wiring surrounded by insulating layers with high thermal conductivity, such as silicon nitride, aluminum nitride, or aluminum oxide

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS11925123B2Spin-orbit torque type magnetization rotational element, spin-orbit torque type magnetoresistance effect element, and magnetic memory
Publication Date: 2024.03.05 TDK CORP
  • US11925123B2 patent drawing
  • US11925123B2 patent drawing
  • US11925123B2 patent drawing

AI summary

This spin-orbit torque type magnetization rotational element (10) is provided with: a spin-orbit torque wiring (2); a first ferromagnetic layer (1) that is laminated on the spin-orbit torque wiring; a first nonmagnetic metal layer (3) and a second nonmagnetic metal layer (4) that are connected to the spin-orbit torque wiring at positions flanking the first ferromagnetic layer in a plan view from the second direction, and a first insulating layer (31) surrounding the spin-orbit torque wiring, wherein the gravity center (G) of the first ferromagnetic layer is positioned on a side closer to the first nonmagnetic metal layer or the second nonmagnetic metal layer than is a reference point (S) located at the center between the first and second nonmagnetic metal layers in the first direction, and the first insulating layer is any one selected from the group consisting of silicon nitride, aluminum nitride, aluminum oxide, and magnesium oxide.