SOT-MRAM MTJ Layer Formation Sequence to Prevent Channel Metal Redeposition
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Solution Overview
Problem
The manufacturing of spin-orbit torque type magnetic random access memory (SOT-MRAM) is hindered by the redeposition of the SOT layer on the MTJ layer during etching, leading to short circuits and increased manufacturing costs, especially as electronic components become thinner and more miniaturized.
Innovation Solution
The MTJ layer is formed before the channel layer in the spin-orbit torque magnetoresistive memory structure, thereby avoiding the redeposition of metal from the channel layer onto the MTJ layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the SOT layer is formed first and then the MTJ layer is etched, then the SOT-MRAM structure can be manufactured, but the SOT layer material is redeposited on the MTJ layer during etching causing short circuits
Solution Approach 1:
The patent applies preliminary action by forming the MTJ layer before the channel layer, so that the MTJ layer is already in place and protected before channel layer deposition. This prevents the channel layer material from being redeposited on the MTJ layer during subsequent etching processes, thereby maintaining device reliability while enabling manufacturing.
2Volume of moving object
If electronic components are further thinned and miniaturized, then device size is reduced, but redeposition of metal on MTJ layer occurs more frequently increasing manufacturing cost
Solution Approach 1:
By forming the MTJ layer before the channel layer, the patent ensures that the MTJ layer is established early in the process. This preliminary formation allows for better control of subsequent thinning and miniaturization steps, reducing the frequency of redeposition issues even as device size decreases, thereby controlling manufacturing costs.
Solution Approach 2:
The patent inverts the conventional layer formation sequence by creating the MTJ layer before the channel layer, rather than the traditional approach of forming the channel layer first. This inversion fundamentally changes the etching dynamics and prevents material redeposition on the MTJ layer, addressing the manufacturing cost issue associated with miniaturization.
3Ease of operation
If the channel layer is formed before the MTJ layer, then the SOT channel can be created, but metal from the channel layer redeposits on the MTJ layer causing short circuits
Solution Approach 1:
The patent forms the MTJ layer before the channel layer, establishing a clear chronological sequence where the MTJ layer is created first and then protected during channel layer formation and subsequent etching. This preliminary action ensures precise layer formation without cross-contamination, achieving both ease of operation and high manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach prevents short circuits and reduces manufacturing costs by ensuring reliable formation of the MTJ layer, even as memory components are further miniaturized.
Implementation Method 1
spin-orbit torque type magnetic random access memory (SOT-MRAM)
Data Source
AI summary
The present invention provides a spin-orbit torque magnetoresistive memory structure, which comprises a first conductive layer, a magnetic tunneling junction (MTJ) layer, a channel layer, and a second conductive layer stacked sequentially. The MTJ layer is disposed on the first conductive layer. The channel layer is disposed on the MTJ layer. The second conductive layer is disposed on the channel layer. These structures are fabricated sequentially using lithography. By forming the MTJ layer before the channel layer, redeposition of the metal of the channel layer on the MTJ layer can be avoided.