SOT MRAM Connection Layout for Low-Power Multi-Unit Writing
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Solution Overview
Problem
Existing MRAM technologies face challenges in efficiently connecting multiple memory units while maintaining high performance and low power consumption, particularly in spin orbit torque (SOT) MRAM structures.
Innovation Solution
A conductive line and SOT metal conductive line are used to electrically connect multiple MRAM units, with switch elements to control current flow, allowing for simultaneous or individual write operations using SOT and STT methods.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If multiple MRAM units are connected using conventional methods, then connectivity is achieved, but power consumption increases and performance deteriorates
Solution Approach 1:
The patent segments the connection structure by introducing a conductive line that divides and separately connects multiple MRAM units (first, second, third, and fourth units) to the SOT metal conductive line. This segmentation allows independent control and lower power consumption for each unit while maintaining overall system connectivity through the shared SOT line.
2Use of energy by moving object
If SOT metal conductive line is used to connect multiple MRAM units, then low power consumption is achieved, but manufacturing complexity increases
Solution Approach 1:
The patent merges the SOT metal layer with the conductive line structure by forming the SOT metal conductive line from the same SOT metal layer that is already present on each MRAM unit. This merging approach reduces the number of additional materials and processing steps required, thereby lowering manufacturing complexity while maintaining the low-power SOT connection architecture.
3Ease of manufacture
If conventional connection methods are used, then manufacturing is simpler, but write operation flexibility is reduced
Solution Approach 1:
The patent implements a universal connection architecture where the SOT metal conductive line serves multiple functions: it connects all four MRAM units, enables both SOT and STT write operations, and allows selective addressing of individual units through the conductive line. This multi-functional design provides write operation flexibility without requiring separate specialized connection structures for each function.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient, low-power connection of multiple MRAM units with flexible write operations, enhancing performance and versatility in programming memory units.
Implementation Method 1
Another type of MRAM is spin orbit torque (SOT) MRAM, which uses current to change the spin direction of electrons in the free layer to change the direction of the magnetic moment, thereby to write or erase the SOT MRAM.
Implementation Method 2
MRAM provides performance comparable to volatile static random access memory, and has low power consumption and high density comparable to volatile dynamic random access memory.
Data Source
AI summary
A fabricating method of an MRAM structure includes forming a bottom electrode material layer, a reference material layer, a barrier material layer, a free material layer, and a spin orbit torque (SOT) metal layer stacked from bottom to top. The SOT metal layer, the free material layer, the barrier material layer, the reference material layer, and the bottom electrode material layer are etched to form a first memory unit and a second memory unit. A conductive line is formed between the first memory unit and the second memory unit. An SOT metal conductive line is formed to electrically connect one end of the first memory unit, one end of the conductive line, and one end of the second memory unit. A first switch element and a second switch element are respectively formed at both ends of the SOT metal conductive line.