SOT-MRAM Switching via Competing Spin Currents Without Field
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Solution Overview
Problem
Existing spin-orbit torque magnetoresistive random access memory (SOT-MRAM) requires an external magnetic field for deterministic magnetization switching, which hinders high-density integration.
Innovation Solution
A spin-orbit torque magnetoresistive random access memory utilizing an orbital Hall layer and alloy material layer generates competing spin currents to achieve electronically controlled magnetic switching without external magnetic fields, comprising an orbital Hall layer, alloy material layer, magnetic tunnel junction, and protective layer to induce deterministic magnetization switching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an external magnetic field is used to achieve deterministic magnetization switching, then the magnetization switching reliability is improved, but the device complexity and integration density deteriorate due to the requirement of additional magnetic field generation structures
Solution Approach 1:
The patent extracts and eliminates the external magnetic field generation structures from the SOT-MRAM device. By removing the need for external magnetic fields, the device achieves magnetization switching through purely electrical means using spin-orbit torque, thereby reducing device complexity and enabling high-density integration while maintaining switching reliability through the orbital Hall effect and competing spin current mechanisms
Solution Approach 2:
The patent replaces the mechanical/external magnetic field system with an electrical spin-orbit torque system. Instead of using external magnetic fields (which require additional coils and power systems), the invention uses electric current to generate orbital polarized current in the orbital Hall layer, which then generates spin polarized current to switch magnetization, substituting a simpler electrical system for the complex magnetic field generation system
2Use of energy by moving object
If the orbital Hall layer and alloy material layer are used to generate competing spin current, then the critical switching current density is reduced, but the manufacturing precision requirement increases
Solution Approach 1:
The patent employs composite material structures, specifically the orbital Hall layer combined with alloy material layer having opposite spin Hall angles. This composite structure generates competing spin currents that reduce the critical switching current density. The use of materials with opposite spin Hall angles creates a synergistic effect that lowers the energy barrier for magnetization switching, achieving lower critical current density through material composition rather than increasing manufacturing precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Reduces critical switching current density and enables electrically controlled magnetic switching, facilitating high-density integration and efficient data storage.
Implementation Method 1
an orbital Hall layer configured to generate an orbital polarized current under an action of an in-plane current flowing through the orbital Hall layer
Implementation Method 2
an alloy material layer including an alloy material having spin Hall angles with opposite polarities, where the alloy material layer is on the orbital Hall layer and is configured to generate a spin polarized current in a first spin direction and a spin polarized current in a second spin direction opposite to the first spin direction
Implementation Method 3
A spin-orbit torque magnetoresistive random access memory
Implementation Method 4
induce a deterministic magnetization switching of a magnetic moment of the magnetic free layer
Implementation Method 5
a magnetic tunnel junction on the alloy material layer, where the magnetic tunnel junction includes from bottom to top: a magnetic free layer on the alloy material layer
Data Source
AI summary
A spin-orbit torque magnetoresistive random access memory and a method of operating the same. The memory includes memory cells. Each memory cell includes: an orbital Hall layer for generating an orbital polarized current under an action of an in-plane current; an alloy material layer including an alloy material having spin Hall angles with opposite polarities and for generating spin polarized currents in opposite spin directions under an action of the in-plane current flowing through the alloy material layer and the orbital polarized current; a magnetic tunnel junction, including a magnetic free layer, a tunneling insulation layer, a magnetic pinned layer, and an antiferromagnetic layer or artificial antiferromagnetic layer. A competing spin current effect is generated by the spin polarized currents in the opposite spin directions to induce a deterministic magnetization switching of a magnetic moment of the magnetic free layer, so as to store an information in the memory cell.