Source/Drain Contact Air Gap Layout for Lower Parasitic Capacitance
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Solution Overview
Problem
The challenge in semiconductor devices is to reduce short channel effects and capacitance among contacts as devices miniaturize, particularly in finFETs and multi-bridge channel FETs, while ensuring reliable contact formation in reduced regions.
Innovation Solution
Incorporation of an air gap in the contact insulating layer on the source/drain contact of semiconductor devices, which minimizes parasitic capacitance and enhances reliability by reducing contact area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If device size is reduced for miniaturization, then productivity and integration density are improved, but parasitic capacitance among contacts increases and reliability deteriorates
Solution Approach 1:
The patent extracts the harmful dielectric material from between contacts and replaces it with an air gap. By removing the solid dielectric that causes parasitic capacitance, the invention reduces unwanted electrical coupling between adjacent contacts while maintaining the miniaturized device structure, thus improving reliability without sacrificing integration density
Solution Approach 2:
The invention introduces a porous structure (air gap) into the insulating layer between contacts. This air gap acts as a porous medium with void spaces that eliminate dielectric material, thereby reducing parasitic capacitance while maintaining the physical separation and insulation between contacts in the miniaturized device
2Object-generated harmful factors
If contact area is reduced to minimize parasitic capacitance, then parasitic capacitance decreases, but contact formation reliability worsens
Solution Approach 1:
The patent removes the dielectric material that generates parasitic capacitance from the region between contacts, replacing it with an air gap. This extraction of harmful material reduces parasitic capacitance without requiring further reduction of contact area, thereby maintaining contact formation reliability
Solution Approach 2:
The air gap acts as an intermediary medium between contacts, providing electrical insulation without the parasitic capacitance characteristics of solid dielectric materials. This intermediary structure allows contacts to maintain adequate area for reliable formation while minimizing unwanted electrical coupling
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The air gap effectively reduces parasitic capacitance and improves the reliability of semiconductor devices by maintaining functional integrity and performance in miniaturized structures.
Implementation Method 1
The air gap is disposed on an upper surface of the source/drain contact... effectively reduces parasitic capacitance
Data Source
AI summary
A semiconductor device of the disclosure includes an active pattern extending on a substrate in a first direction, a gate structure extending on the active pattern in a second direction intersecting the first direction, a source/drain region disposed on at least one side of the gate structure, a source/drain contact connected to the source/drain region, and a contact insulating layer disposed on the source/drain contact. The contact insulating layer includes at least one air gap. The air gap is disposed on an upper surface of the source/drain contact.