3D Memory Source Structure Sealing Layer Bridge Prevention

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Solution Overview

Problem

Three-dimensional non-volatile memory devices face challenges in reducing leakage current caused by bridges in the source line structure, which affects their integration degree and electrical characteristics.

Innovation Solution

The non-volatile memory device incorporates a source structure with a sealing layer, a source liner, a gap-filling layer, and a source contact pattern, where the source liner is formed on the sealing layer and the bottom surface of the slit to directly contact the source line region, preventing the formation of bridges.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If a three-dimensional non-volatile memory device is designed with high integration degree, then the device can be applied to electronic products with decreasing volumes, but leakage current caused by bridge formation in the source line structure increases

Engineering Contradiction:

Improveintegration degreeVSAvoidleakage current

Core Design Contradiction:

ProductivityVSObject-generated harmful factors

Solution Approach 1:

The patent introduces a sealing layer as an intermediary component between the source line structure and the gate lines. This sealing layer fills the slit formed in the source line region and prevents direct contact or bridge formation between conductive elements, thereby eliminating the leakage current pathway while maintaining the high integration degree of the three-dimensional memory device

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The source line structure is segmented by forming a slit that divides it into separate regions. This segmentation prevents continuous conductive paths that could form bridges, and the sealing layer is then placed within the slit to further isolate the segments. This segmentation approach allows high integration while controlling leakage current

Inventive Principle:

Principle #1Segmentation

2Device complexity

If the source line structure is simplified to reduce manufacturing complexity, then the device complexity decreases, but bridge formation between gate lines and source contact pattern increases causing leakage current

Engineering Contradiction:

Improvesource line structure complexityVSAvoidelectrical characteristics

Core Design Contradiction:

Device complexityVSReliability

Solution Approach 1:

The sealing layer serves as a mediator that is easily integrated into the source line structure without adding significant manufacturing complexity. It is formed to fill the slit and provide electrical isolation, preventing bridge formation and ensuring reliable electrical characteristics while maintaining structural simplicity

Inventive Principle:

Principle #24Intermediary (Mediator)

Data Source

PatentUS12219764B2Non-volatile memory device and method of manufacturing the non-volatile memory device

Publication Date: 2025.02.04 SK HYNIX INC

AI summary

A non-volatile memory device may include a semiconductor substrate, a stack structure and a source structure. The stack structure may be formed on the semiconductor substrate. The source structure may be formed in a slit configured to divide the stack structure. The source structure may include a sealing layer, a source liner, a gap-filling layer and a source contact pattern. The sealing layer may be formed on an inner wall of the slit. The source liner may be formed on a surface of the sealing layer and a bottom surface of the slit. The gap-filling layer may be formed in the slit. The source contact pattern may be formed on the gap-filling layer in the slit. The source contact pattern may be electrically connected with the source liner.