Spin Control Device Using Triangular Nanostructure
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional spin field effect transistors (FETs) are limited by low spin electron injection rates, short spin relaxation distances, high interface resistances, and require operation at extremely low temperatures, preventing them from functioning effectively at room temperature.
Innovation Solution
A spin control electronic device with a transfer channel featuring a low-dimensional nanostructure, such as a nanowire or graphite-based nanostructure, and electrodes made of ferromagnetic materials, including an insulating film to reduce interfacial resistance and enhance spin injection rates, allowing operation at room temperature.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional spin FET structure is used, then spin electron injection is achieved, but injection rate is extremely low and device requires operation at extremely low temperatures below 77K
Solution Approach 1:
The patent changes the operating temperature parameter from extremely low temperatures (below 77K) to room temperature by modifying the material composition and interface structure. This involves using specific ferromagnetic materials with appropriate magnetization characteristics and creating optimized interfaces between ferromagnetic electrodes and semiconductor channels to maintain spin injection efficiency at higher temperatures.
Solution Approach 2:
The patent employs composite material structures combining ferromagnetic materials (such as CoFeB, CoFe) with semiconductor materials (such as Si, Ge, GaAs) to create spin FET devices that operate at room temperature. The composite structure leverages the magnetic properties of ferromagnetic materials and the electronic transport properties of semiconductors to achieve both high spin injection rate and room temperature operation.
2Ease of operation
If ferromagnetic source and drain electrodes are used, then spin direction control is achieved, but interface resistance between electrodes and channel becomes high
Solution Approach 1:
The patent introduces an intermediary layer or optimized interface structure between the ferromagnetic electrodes and the semiconductor channel. This intermediary structure serves as a bridge that facilitates spin electron injection while minimizing interface resistance. The interface may include thin oxide layers, interface engineering structures, or specific material compositions that mediate the interaction between ferromagnetic and semiconductor materials.
3Power
If spin electron injection is implemented, then resistance change according to spin direction is achieved, but spin relaxation distance becomes short
Solution Approach 1:
The patent employs low-dimensional nanostructures (one-dimensional nanowires or two-dimensional thin films) as the semiconductor channel. This dimensional reduction increases the surface-to-volume ratio, enhancing spin-orbit coupling effects and allowing for longer spin relaxation distances. The low-dimensional structure provides additional degrees of freedom for spin control and extends the distance over which spin information can be maintained.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Improves spin electron injection rates and reduces interfacial resistance, enabling the device to operate efficiently at room temperature with improved speed and reduced power consumption.
Implementation Method 1
electrons spin-polarized at the source electrode are injected into the transfer channel
Implementation Method 2
a transfer channel that includes a low-dimensional nanostructure, the nanostructure being located on a substrate
Implementation Method 3
including an insulating film to reduce interfacial resistance
Implementation Method 4
the spin-polarized electrons reach the drain electrode through the transfer channel, and resistance differs depending on the angle the magnetization direction of the spin-polarized electrons forms with the magnetization direction of the drain electrode
Data Source
AI summary
A spin control electronic device operable at room temperature according to an embodiment of the present invention includes a transfer channel that includes a low-dimensional nanostructure, the nanostructure being located on a substrate, having an elongate shape in a first direction and having a cross section, cut along a second direction that is perpendicular to the first direction, in the shape of a triangle; a source electrode located on the substrate and intersecting the transfer channel, the source electrode covering part of the transfer channel; and a drain electrode spaced apart from the source electrode on the substrate, the drain electrode intersecting the transfer channel and covering part of the transfer channel.