Spin-Current Magnetic Memory with a 2D Van Der Waals Free Layer
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Solution Overview
Problem
Existing magnetic memory technologies face challenges in achieving high-speed switching, durability, and integration density, with separate write and read paths leading to inefficiencies and potential durability issues.
Innovation Solution
A magnetic memory device utilizing a spin current with a data storage layer comprising a pinned layer and a free layer, where the free layer is a two-dimensional material with spin Hall effect, and operating currents are applied to switch the magnetic moment efficiently, reducing coercive force and enabling high-speed, low-current operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional magnetic memory device uses separate write and read paths with current flowing through the MTJ, then the read operation can be performed, but the write operation requires high current density causing durability issues and the structure becomes more complex
Solution Approach 1:
The patent merges the write and read paths into a single MTJ structure. The same MTJ used for reading also performs writing through spin-orbit torque, eliminating the need for separate write paths and reducing structural complexity while improving durability by reducing overall current stress on the device
2Ease of operation
If the free layer uses conventional magnetic materials, then the magnetic moment can be switched, but the coercive force is high requiring high operating current density
Solution Approach 1:
The patent changes the material parameter of the free layer by using a two-dimensional material with strong spin-orbit coupling. This material parameter change reduces the coercive force significantly, allowing the magnetic moment to be switched at much lower current densities compared to conventional magnetic materials
Solution Approach 2:
The patent employs a composite structure where the free layer is formed by a two-dimensional material that combines magnetic properties with strong spin-orbit coupling. This composite material approach enables both low coercive force and efficient spin-orbit torque switching, achieving low operating current density
3Quantity of substance
If the memory device uses traditional scaling approaches, then integration density can be increased, but the number of unit cells per driving circuit remains limited
Solution Approach 1:
The patent transitions from planar scaling to vertical stacking by forming multiple data storage layers at different heights. This three-dimensional arrangement allows multiple unit cells to share common wiring structures, significantly increasing the number of unit cells that can be driven by a single driving circuit and improving integration density
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves high-speed switching with improved durability and increased integration density, reducing operating current density and enhancing the number of unit cells per driving circuit, thus optimizing memory performance.
Implementation Method 1
the free layer includes a two-dimensional material having a spin Hall effect, magnetic properties, and metal properties
Data Source
AI summary
Provided are a magnetic memory using a spin current, an operating method thereof, and/or an electronic apparatus including the magnetic memory. The magnetic memory includes, first and second wirings spaced apart from each other and intersecting each other, and a data storage layer between the first and second wirings. The data storage layer includes a pinned layer with a fixed magnetic moment, a free layer spaced apart from the pinned layer and not having a fixed magnetic moment, and an insulating tunnel barrier layer provided between the pinned layer and the free layer. Among the first and second wirings, the wiring contacting the free layer includes a conductive wiring having no spin Hall effect, and the free layer includes a two-dimensional material which at room temperature has a spin Hall effect, magnetic properties, and metal properties. The two-dimensional material includes a two-dimensional van der Waals material.