Spin-Orbit Torque Magnetic Wire Memory for Fast High-Density Access
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Solution Overview
Problem
Current semiconductor memory technologies, such as NAND flash memory, face limitations in recording speed and capacity compared to magnetic memory, which can record information in short times with higher speeds due to the need for physical electron movement, whereas magnetic memory devices like race track memory require complex structures for data access.
Innovation Solution
A magnetic memory device incorporating a spin orbit torque (SOT) source and a magnetic fine wire with a perpendicular orientation, utilizing a three-terminal structure with electrodes and a controller circuitry to generate and control SOT for high-density data recording and retrieval, leveraging the magnetic domain wall movement for efficient data storage and access.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If semiconductor memory (NAND flash) is used to increase recording capacity through three-dimensional technology, then recording capacity is improved, but recording speed deteriorates due to the need for physical electron movement
Solution Approach 1:
The patent replaces the mechanical electron movement mechanism in semiconductor memory with a magnetic domain wall movement mechanism. Magnetic domain walls can be moved and manipulated without requiring physical electron transport, enabling faster recording speeds while maintaining high recording capacity through three-dimensional magnetic fine wire structures.
Solution Approach 2:
The patent changes the fundamental storage parameter from electrical charge presence/absence to magnetic domain wall position. This parameter change allows information to be stored and accessed through magnetic properties rather than electrical properties, resolving the speed-capacity tradeoff by enabling parallel magnetic domain manipulation.
2Adaptability or versatility
If magnetic memory uses a complex structure like race track memory to achieve random access, then adaptability is improved, but device complexity increases
Solution Approach 1:
The patent segments the magnetic fine wire into multiple vertical layers, with each layer containing multiple magnetic domains that can be independently controlled. This segmentation enables random access to different data bits without requiring complex routing structures, as each vertical column can be independently addressed and accessed.
Solution Approach 2:
The patent transitions from the planar two-dimensional structure of race track memory to a three-dimensional vertical structure. By stacking magnetic fine wires vertically and using vertical current flow to control domain walls, the patent achieves random access capability through the third dimension, simplifying the overall device structure while maintaining adaptability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution enables a magnetic memory device with high density, capacity, and reliability, potentially exceeding the recording capacity of next-generation vertical NAND memory by using the SOT source and magnetic fine wire configuration, allowing for efficient data recording, movement, and retrieval with a simpler three-terminal structure.
Implementation Method 1
A magnetic memory device incorporating a spin orbit torque (SOT) source and a magnetic fine wire with a perpendicular orientation
Data Source
AI summary
A magnetic memory device is provided. The magnetic memory device includes a spin orbit torque (SOT) source configured to generate SOT, and a magnetic fine wire of which one end contacts a main surface of the SOT source. A direction of SOT generated by the SOT source is perpendicular to a direction in which the magnetic fine wire extends, and a magnetic domain in the magnetic fine wire is parallel to the direction in which the magnetic fine wire extends.