Polygon Spiral Resistor Layout for Compact High-Voltage Semiconductors
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Solution Overview
Problem
The semiconductor industry faces challenges in forming high-voltage resistors that do not increase the size and cost of semiconductor devices while reducing electric fields, which often result in reduced device performance.
Innovation Solution
A high-voltage resistor is formed using a pattern with sides made from a conductor material and corners made from a higher resistance material, capacitively coupled to the semiconductor substrate, to create an electric field that matches the underlying semiconductor region, allowing for reduced device size without compromising reverse breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a large resistance value resistor is formed in a conventional semiconductor device, then the resistance value is sufficient for high-voltage applications, but the device size increases significantly
Solution Approach 1:
The patent applies local quality by creating regions with different doping concentrations within the drift region. Specifically, it forms a first doped region with a first doping concentration and a second doped region with a second doping concentration that is higher than the first. This non-uniform doping profile allows the resistor to achieve high resistance values in specific localized areas while maintaining smaller overall device dimensions, as the high-resistance function is concentrated in particular regions rather than requiring the entire device to be large.
2Reliability
If a conventional resistor structure is used in high-voltage applications, then the resistor can handle high voltages, but high electric fields are generated that reduce device performance
Solution Approach 1:
The patent applies parameter changes by systematically varying the doping concentration parameter throughout the drift region. It establishes a doping concentration profile that transitions from a first doping concentration in the first doped region to a second doping concentration in the second doped region, where the second concentration is higher. This parameter variation allows the structure to maintain appropriate electric field distribution for high-voltage handling while reducing peak electric field values that would otherwise harm device performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the breakdown voltage and reduces electric fields within the semiconductor device, enabling smaller device sizes without sacrificing performance.
Implementation Method 1
A high-voltage resistor is formed using a pattern with sides made from a conductor material and corners made from a higher resistance material, capacitively coupled to the semiconductor substrate, to create an electric field that matches the underlying semiconductor region
Data Source
AI summary
In an embodiment, a semiconductor device includes a resistor that overlies a doped region of the semiconductor device. The resistor is formed into a pattern of a polygon spiral. An embodiment of the pattern of the resistor includes sides and corners. The material of the sides has a low resistivity and the material of the corners has a higher resistivity.