Split Transistor Wiring Layout for Narrow-Bezel Display Circuits
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Solution Overview
Problem
Display devices face challenges in achieving a narrower frame region while maintaining circuit characteristics, leading to degraded image quality due to reduced wiring widths in peripheral circuits.
Innovation Solution
A semiconductor device with transistors divided into pieces along a second direction, where branch wiring sections function as gate electrodes and source regions are formed within main and bifurcation wiring sections, allowing for efficient arrangement and reduced wiring width along the first direction, thereby improving space efficiency without degrading characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If wiring width within peripheral circuit is reduced to achieve space saving, then area of frame region is reduced, but circuit characteristics are degraded and display image quality is lowered
Solution Approach 1:
The transistor is divided into a first transistor and a second transistor along the second direction. The first transistor has a gate electrode formed by the trunk wiring section, and the second transistor has a gate electrode formed by the branch wiring sections. This segmentation allows the circuit to maintain functional reliability while reducing the overall area occupation.
Solution Approach 2:
The transistor is divided and formed into multiple pieces along the second direction, which is different from the first direction that the gate electrodes extend. This dimensional change in arrangement allows for more efficient space utilization while maintaining wiring width and circuit characteristics.
2Area of stationary object
If wiring width is reduced to achieve space saving, then area is reduced, but display image quality is lowered due to flicker phenomenon
Solution Approach 1:
By dividing the transistor into multiple pieces with gate electrodes formed by different wiring sections, the design maintains adequate wiring width to prevent flicker phenomena while achieving space savings in the frame region.
Solution Approach 2:
The gate electrodes are formed by different wiring sections (trunk wiring section for first transistor, branch wiring sections for second transistor) with appropriate widths to ensure sufficient current driving capability and prevent display image quality degradation.
3Productivity
If transistor is divided and formed into multiple pieces, then arrangement efficiency is improved, but device complexity increases
Solution Approach 1:
The transistor is segmented into first and second transistors arranged along the second direction, improving arrangement efficiency. The segmentation is implemented in a systematic way that balances complexity increase with layout optimization.
Solution Approach 2:
The wiring structure serves multiple functions: the trunk wiring section forms the gate electrode of the first transistor, the branch wiring sections form the gate electrodes of the second transistor, and the overall structure enables efficient space utilization while maintaining circuit functionality.
Data Source
AI summary
Disclosed herein is a semiconductor device including: one or a plurality of pieces of first wiring having a main wiring section and a bifurcation wiring section; one or a plurality of pieces of second wiring having a trunk wiring section and a plurality of branch wiring sections within a gap region between the main wiring section and the bifurcation wiring section; one or a plurality of transistors each divided and formed into a plurality of pieces, the plurality of branch wiring sections individually functioning as a gate electrode and the one or plurality of transistors having a source region formed within the main wiring section and within the bifurcation wiring section and having a drain region formed between the plurality of branch wiring sections; and one or a plurality of pieces of third wiring electrically connected to the drain region of the one or plurality of transistors.