Sputtering Device Control for Thin-Film Deposition Precision
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Solution Overview
Problem
Current sputtering methods for forming thin-films in organic light emitting devices lack precise control over deposition thickness and gas flow rates, leading to inefficiencies in material deposition and potential variations in film quality.
Innovation Solution
A sputtering device and method that include a control unit to manage the movement of substrates and target units, power supply, and gas flow rates, allowing for precise control of deposition thickness and calculation of deposition rates based on gas flow rates, stored in the form of linear relationships for consistent film formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional sputtering methods are used to form thin-films, then deposition can be performed, but precise control over deposition thickness and gas flow rates is lacking, leading to variations in film quality
Solution Approach 1:
The control unit continuously monitors the actual deposition thickness during the sputtering process and compares it with the target thickness. Based on this feedback, the control unit dynamically adjusts the substrate moving speed or target rotating speed to compensate for deviations, ensuring precise thickness control and consistent film quality across multiple substrates.
Solution Approach 2:
The system dynamically changes operational parameters including substrate moving speed, target rotating speed, and gas flow rates during the deposition process. The control unit modifies these parameters in real-time based on measured deposition rates and target thickness requirements, enabling precise control over film thickness and quality while maintaining reliable deposition conditions.
2Productivity
If conventional sputtering methods are used, then material deposition can occur, but deposition rates are not precisely controlled, leading to inefficiencies in material deposition
Solution Approach 1:
The system transitions from static deposition conditions to dynamic control where the substrate moving speed and target rotating speed are continuously adjusted during the deposition process. The control unit modifies these speeds in real-time based on measured deposition rates, enabling both high productivity through optimized deposition rates and precise thickness control through adaptive parameter changes.
Solution Approach 2:
The control unit measures the actual deposition rate during the process and uses this feedback to adjust the substrate moving speed or target rotating speed. This closed-loop control enables the system to maintain optimal deposition rates for high productivity while simultaneously achieving precise thickness control by compensating for any deviations from the target deposition rate.
3Reliability
If gas flow rates are not monitored, then the sputtering process can proceed, but variations in gas flow rates cause inconsistencies in deposition conditions and film quality
Solution Approach 1:
The control unit monitors gas flow rates during the sputtering process and uses this information to maintain consistent deposition conditions. By continuously measuring and adjusting gas flow rates based on feedback from the deposition process, the system ensures reliable and repeatable film formation while integrating the monitoring function into the existing control architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise control over deposition thickness and rate, improving film quality and consistency, particularly in organic light emitting devices, by calculating and applying optimal moving speeds and voltages based on measured gas flow rates, ensuring accurate and repeatable thin-film formation.
Implementation Method 1
The sputtering method may be performed in various manners. For example, a thin-film may be formed on a substrate by moving the substrate while a target unit is stopped or by revolving a cylindrical target unit.
Implementation Method 2
Such deposition methods include sputtering, chemical vapor deposition (CVD), atomic layer deposition (ALD), etc.
Implementation Method 3
a sensor unit, which measures at least one of a flow rate of oxygen and a flow rate of nitrogen inside the chamber
Implementation Method 4
a thickness measuring unit, which measures a thickness of a material deposited on the substrate
Implementation Method 5
a power supply unit, which applies a voltage between the target unit and the supporting unit, between the target unit and the chamber, or between the target unit and the substrate
Data Source
AI summary
One or more embodiments of the present invention relate to a sputtering device and a sputtering method. By using the sputtering device according to the present embodiment, characteristics of a deposition layer formed at the organic light emitting display apparatus may be improved, thereby improving electric characteristics and image quality of the organic light emitting display apparatus may be improved.