Magnetron Sputtering Target Temperature Control
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Solution Overview
Problem
In sputtering apparatuses used for semiconductor device manufacturing, high power supply can cause excessive heating and melting of targets with low thermal conductivity, leading to abnormal film formation and voids in the target, which can result in particle mixing in the formed films.
Innovation Solution
A magnetron sputtering apparatus equipped with a target electrode, a coolant channel, and detectors to monitor temperature and torque, allowing for real-time detection of target peeling and melting, enabling prevention of abnormal processing by adjusting the power supply and cooling mechanisms.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high power is supplied to the target to increase sputtering rate, then productivity is improved, but the target temperature increases causing local excessive heating and melting
Solution Approach 1:
The magnet array is made movable along the target surface, dynamically adjusting the plasma generation position to prevent stationary overheating. This allows continuous sputtering at high power while distributing thermal load across different target regions through periodic magnet movement.
Solution Approach 2:
The magnet array is divided into multiple independent magnets that can be moved separately or in groups. This segmentation allows flexible control of plasma generation zones, enabling selective cooling of overheated regions while maintaining high sputtering rates in other areas.
2Productivity
If high power is supplied to the target to increase film formation speed, then productivity is improved, but abnormal film formation occurs due to target melting
Solution Approach 1:
Temperature detectors continuously monitor target temperature and provide feedback to the control system. When abnormal temperature rise is detected, the system automatically adjusts magnet position or reduces power supply to prevent target melting, thereby maintaining film quality while preserving high productivity during normal operation.
Solution Approach 2:
The movable magnet array dynamically adjusts plasma generation positions based on real-time temperature conditions, preventing stationary regions from overheating and causing abnormal film formation. This dynamic control maintains consistent film quality at high sputtering rates.
3Temperature
If a movable magnet is added to move the erosion area, then target temperature distribution is improved, but device complexity increases
Solution Approach 1:
The magnet array consists of multiple independent magnets that can be moved separately, allowing simplified control mechanisms for each magnet rather than moving a large integrated magnet. This segmentation reduces the complexity of the driving mechanism while achieving effective temperature distribution.
Solution Approach 2:
The system uses temperature detector feedback to automatically control magnet movement, reducing the need for complex external control systems. The apparatus self-regulates temperature distribution through automated responses to temperature measurements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system effectively prevents abnormal film formation by detecting temperature-related issues and adjusting the sputtering conditions, ensuring consistent film quality and target integrity.
Implementation Method 1
a power supplier configured to supply a power to the target to generate the plasma
Implementation Method 2
sputter the target and form a film on the substrate
Data Source
AI summary
A sputtering apparatus is provided. The sputtering apparatus comprises a vacuum chamber in which a substrate is located; a target having one surface facing an inner surface of the vacuum chamber; a gas supplier configured to supply a gas for generating plasma in the vacuum chamber; a power supplier configured to supply a power to the target to generate the plasma, sputter the target, and form a film on the substrate; and an abnormality detector configured to detect abnormality caused by a temperature of the target.