Stable Surface Wave Plasma Source With Segmented Recesses
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Solution Overview
Problem
Surface wave plasma (SWP) sources face challenges in achieving stability and uniformity, which are crucial for effective semiconductor processing, particularly in plasma etching processes, due to issues like plasma mode jumps and variations in plasma parameters.
Innovation Solution
The implementation of an electromagnetic (EM) wave launcher with a slot antenna and a resonator plate, featuring distinct recess configurations, coupled with a power coupling system to provide EM energy, helps in generating a stable and uniform plasma by controlling the propagation of EM energy and optimizing plasma generation across the plasma surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If SWP sources are used to improve plasma processing performance, then ionization efficiency and electron temperature control are improved, but plasma stability and uniformity deteriorate due to mode jumps and parameter variations
Solution Approach 1:
The resonator plate is divided into multiple recess regions (first recess configuration and second recess configuration) that segment the plasma generation area. This segmentation allows different regions to contribute differently to plasma formation, stabilizing the overall plasma by preventing mode jumps while maintaining high ionization efficiency in each segment.
Solution Approach 2:
Different recess configurations are assigned to different regions of the resonator plate to create local variations in plasma properties. The first recess configuration optimizes for certain plasma parameters while the second configuration optimizes for others, allowing simultaneous achievement of high ionization and stable uniform plasma across the substrate area.
2Manufacturing precision
If SWP sources are used to achieve high ionization at lower electron temperature, then plasma quality for etching is improved, but plasma uniformity deteriorates due to parameter variations
Solution Approach 1:
The resonator plate surface is segmented into multiple recess regions with different configurations, allowing each region to contribute to different aspects of plasma quality. This ensures uniform plasma composition across the substrate while maintaining the high ionization efficiency needed for precise etching.
Solution Approach 2:
The recess configurations modify local electromagnetic field distribution and plasma parameters (electron density, temperature, composition) in different regions. By carefully designing the size, shape, and distribution of recesses, optimal plasma parameters are achieved uniformly across the entire processing area.
3Productivity
If conventional plasma sources are used, then plasma generation is achieved, but substrate damage increases due to inconsistent plasma conditions
Solution Approach 1:
The segmented recess configurations create consistent plasma conditions across different regions of the substrate, preventing localized plasma instabilities that cause substrate damage. Each recess region contributes to uniform plasma distribution, reducing harmful variations in ion flux and energy deposition.
Solution Approach 2:
The resonator plate with specific recess configurations provides inherent feedback stabilization by coupling electromagnetic energy in a controlled manner. This feedback mechanism maintains consistent plasma parameters (density, temperature) across the substrate, preventing the parameter variations that lead to substrate damage while maintaining high productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances plasma stability and uniformity, leading to improved etching performance and reduced substrate damage by maintaining consistent plasma conditions over a wide range of power and pressure variations.
Implementation Method 1
generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma
Implementation Method 2
the EM energy comprises an effective wavelength (λ) of propagation in the resonator plate
Implementation Method 3
configured to provide the EM energy to the EM wave launcher for forming the plasma
Data Source
AI summary
A surface wave plasma (SWP) source is described. The SWP source comprises an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma. The EM wave launcher comprises a slot antenna having at least one slot. The SWP source further comprises a first recess configuration and a second recess configuration formed in the plasma surface, wherein at least one first recess of the first recess configuration differs in size and/or shape from at least one second recess of the second recess configurations. A power coupling system is coupled to the EM wave launcher and configured to provide the EM energy to the EM wave launcher for forming the plasma.