Stacked Semiconductor Chip Electrode Plate for Heat Dissipation
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Solution Overview
Problem
Conventional semiconductor devices with vertical transistors using SiC face challenges in efficiently dissipating heat generated when large currents flow, leading to potential thermal management issues.
Innovation Solution
A semiconductor device configuration featuring a first and second semiconductor chip with a third electrode plate having a thinner first area and a thicker second area, where the first area is bonded to both chips, facilitating efficient heat conduction and dissipation through a heat sink, and utilizing materials with high thermal conductivity and low thermal resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a conventional semiconductor device structure is used, then the device can be manufactured with standard processes, but heat dissipation efficiency is insufficient when large currents flow
Solution Approach 1:
The third electrode plate is designed with different thicknesses in different regions: a first area with a first thickness and a second area with a second thickness different from the first. This local variation in thickness optimizes heat dissipation efficiency in different zones of the electrode plate, allowing better thermal management where needed without unnecessarily complicating the entire structure.
Solution Approach 2:
The third electrode plate is divided into distinct functional areas (first area and second area) with different thickness characteristics. This segmentation allows each area to perform its specific function optimally - the first area for enhanced heat dissipation and the second area for structural support or alternative functions - thereby improving overall heat management without requiring a completely complex redesigned structure.
2Strength
If thicker electrode plates are used throughout, then structural strength is improved, but thermal resistance increases and heat dissipation efficiency decreases
Solution Approach 1:
Different regions of the third electrode plate have different thicknesses optimized for their specific requirements. The first area has a thickness optimized for heat dissipation (lower thermal resistance), while the second area has a different thickness optimized for structural strength. This local optimization allows each region to perform its function efficiently without compromising overall device performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables effective heat dissipation from both semiconductor chips, reducing thermal resistance and preventing peeling, thus maintaining device performance and reliability under high current conditions.
Implementation Method 1
enables effective heat dissipation from both semiconductor chips, reducing thermal resistance
Implementation Method 2
facilitating efficient heat conduction and dissipation through a heat sink
Data Source
AI summary
A semiconductor device includes: a first semiconductor chip having first and second electrodes on a first surface and having a third electrode on a second surface; a second semiconductor chip having first and second electrodes on a first surface and having a third electrode on a second surface; a first electrode plate bonded to the second electrode of the first semiconductor chip; a second electrode plate bonded to the third electrode of the second semiconductor chip; and a third electrode plate having a first area sandwiched between the first and second semiconductor chips and a second area not sandwiched between the first and second semiconductor chips, one surface of the first area is bonded to the second electrode of the second semiconductor chip, and another surface is bonded to the third electrode of the first semiconductor chip, and the first area is thinner than the second area.