Stacked Semiconductor Die Assemblies with Multiple Thermal Paths
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Solution Overview
Problem
Vertically stacked semiconductor die packages face challenges with heat management, as the combined heat generated by individual dies increases operating temperatures, potentially exceeding maximum operating temperatures due to the concentration of thermal energy at the peripheral portion of the underlying logic die.
Innovation Solution
The implementation of multiple thermal paths, including a first thermal path through the stack of semiconductor dies and a second thermal path via a thermal transfer feature at the peripheral portion of the underlying die, allows for enhanced heat dissipation directly away from the peripheral portion, reducing the operational temperature of the logic die and the stacked memory dies.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple semiconductor dies are vertically stacked to increase processing power without increasing package footprint, then the functional capacity of the package is improved, but the heat generated by the individual dies combines and increases the operating temperatures, potentially exceeding maximum operating temperatures
Solution Approach 1:
The patent segments the thermal management system into multiple independent thermal paths. A first thermal path conducts heat away from the peripheral portion of the logic die, while a second thermal path conducts heat away from the stacked memory dies. This segmentation allows heat from different heat-generating components to be dissipated through separate routes, preventing thermal accumulation and enabling higher processing power without exceeding maximum operating temperatures.
2Productivity
If the density of the dies in the package is increased to meet operating parameters, then the functional capacity is improved, but the heat generated combines and increases operating temperatures above maximum limits
Solution Approach 1:
The patent introduces intermediary thermal conduction structures including a first thermal conduction member between the logic die and heat sink, and a second thermal conduction member between the memory dies and heat sink. These intermediaries facilitate efficient heat transfer from the high-density stacked dies to the heat sink, enabling the system to maintain reliable operating temperatures even with increased die density and functional capacity.
3Device complexity
If a single thermal path is used to conduct heat away from the stacked dies, then the device complexity is reduced, but the heat concentration at the peripheral portion of the logic die causes temperature exceedance
Solution Approach 1:
The patent transitions from a single-dimensional thermal path to a multi-dimensional thermal management architecture. The first thermal path addresses heat dissipation in the lateral dimension from the peripheral portion of the logic die, while the second thermal path addresses heat dissipation from the vertically stacked memory dies. This dimensional expansion of thermal paths effectively distributes heat flow and eliminates temperature concentration without excessive complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively maintains the operating temperatures of the semiconductor dies below their maximum limits, reducing temperature concentration and enhancing thermal management in stacked semiconductor die assemblies.
Implementation Method 1
a first thermal path that conducts heat away from the peripheral portion of the logic die
Implementation Method 2
a second thermal path that conducts heat away from the stacked memory dies
Data Source
AI summary
Stacked semiconductor die assemblies with multiple thermal paths and associated systems and methods are disclosed herein. In one embodiment, a semiconductor die assembly can include a plurality of first semiconductor dies arranged in a stack and a second semiconductor die carrying the first semiconductor dies. The second semiconductor die can include a peripheral portion that extends laterally outward beyond at least one side of the first semiconductor dies. The semiconductor die assembly can further include a thermal transfer feature at the peripheral portion of the second semiconductor die. The first semiconductor dies can define a first thermal path, and the thermal transfer feature can define a second thermal path separate from the first semiconductor dies.