Staggered Stacked FET Gate Layout for Scaled Gate Control
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Solution Overview
Problem
Current semiconductor technologies face challenges in further miniaturizing field-effect transistors (FETs) beyond atomic level scaling while maintaining effective gate control and structural efficiency.
Innovation Solution
The technique involves forming stacked semiconductor devices with transistors in a staggered configuration, using dielectric bonding layers and gate cut portions to create strategic gate contact connections, allowing for enhanced gate control and reduced device size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If FETs are miniaturized beyond atomic level scaling, then device size is reduced, but gate control effectiveness deteriorates
Solution Approach 1:
The patent transitions from planar transistor arrangement to three-dimensional stacked configuration, allowing multiple transistors to be vertically integrated. This dimensional change enables continued scaling of device density without further reducing individual transistor dimensions, thereby maintaining gate control effectiveness while achieving smaller overall device footprint.
Solution Approach 2:
The patent divides the gate control structure into multiple discrete gate regions (first gate region, second gate region) that can be independently configured and contacted. This segmentation allows for optimized gate control over each transistor channel even in the miniaturized stacked configuration, addressing the gate control effectiveness challenge.
2Area of stationary object
If transistors are stacked in staggered configuration, then device footprint is reduced, but structural complexity increases
Solution Approach 1:
The patent employs asymmetric staggered positioning of transistors in the stacked configuration, where transistors are offset rather than directly aligned. This asymmetric arrangement optimizes space utilization to reduce device footprint while the systematic nature of the staggering pattern keeps the manufacturing process relatively straightforward.
Solution Approach 2:
The patent introduces dielectric bonding layers as intermediary structures between stacked transistors. These bonding layers facilitate the complex stacked configuration by providing standardized interfaces for joining transistor layers, thereby reducing the overall structural complexity despite the three-dimensional arrangement.
3Reliability
If gate contacts are strategically connected to multiple gate regions, then transistor control is enhanced, but manufacturing precision requirements increase
Solution Approach 1:
The patent designs gate contact structures that can universally connect to multiple gate regions through the staggered configuration. A single gate contact structure serves multiple transistors by making contact with multiple gate regions, enhancing transistor control while standardizing the manufacturing process to reduce precision requirements.
Solution Approach 2:
The patent incorporates gate cut portions during the manufacturing process as preliminary actions. These pre-formed cut portions in the dielectric layers create predetermined pathways and contact points for gate contacts, establishing alignment references before final contact formation. This preliminary structuring reduces the precision requirements for subsequent gate contact fabrication.
Data Source
AI summary
A semiconductor device includes a first transistor comprising a first gate region, and a second transistor comprising a second gate region. The second transistor is stacked on the first transistor in a staggered configuration. A dielectric bonding layer is between the first transistor and the second transistor, and a gate cut portion is along a side of the first gate region and a side of the second gate region. A gate contact is connected to at least one of the first gate region and the second gate region.