3D Stacked Gate Structure Layout for Lower Parasitic Capacitance
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Solution Overview
Problem
The integration and operational reliability of semiconductor devices are limited by the area occupied by unit memory cells, especially in three-dimensional stacked structures, leading to increased parasitic capacitance and RC delay.
Innovation Solution
A semiconductor device with stacked gate structures and gap-fill insulating layers that reduce parasitic capacitance by distributing gate lines and using insulating materials with lower dielectric constants, along with support structures to enhance connectivity and reduce RC delay.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If memory cells are stacked in three-dimensional structure to improve integration, then degree of integration is improved, but parasitic capacitance increases
Solution Approach 1:
The gate structure is divided into multiple gate lines (first gate lines, second gate lines, third gate lines) stacked in different layers. This segmentation allows the gate structure to achieve higher integration in three-dimensional space while distributing the parasitic capacitance across multiple separated segments, reducing the overall harmful effect.
Solution Approach 2:
The patent transitions from planar two-dimensional gate arrangement to three-dimensional stacked gate structure. By adding the vertical dimension with multiple gate lines at different heights (first, second, and third gate lines), the device achieves higher integration density while the spatial separation in the vertical dimension helps reduce parasitic capacitance between gate lines.
2Productivity
If gate lines are closely packed to improve integration, then degree of integration is improved, but RC delay increases
Solution Approach 1:
Different gate lines are positioned at different local heights and locations within the three-dimensional structure. The first gate lines, second gate lines, and third gate lines are arranged at different vertical positions, creating local quality variations that optimize both integration density and electrical performance by reducing RC delay through strategic spatial distribution.
3Productivity
If unit memory cell area is reduced to improve integration, then degree of integration is improved, but operational reliability deteriorates
Solution Approach 1:
The patent utilizes three-dimensional stacking of gate lines (first, second, and third gate lines at different heights) to achieve higher integration without proportionally reducing the physical dimensions of individual memory cells. This vertical expansion allows smaller unit cell footprints while maintaining adequate cell size for reliable operation, thus improving integration without sacrificing operational reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution improves the degree of integration and operational reliability by reducing parasitic capacitance and RC delay, enhancing program speed and stability in three-dimensional semiconductor devices.
Implementation Method 1
gap-fill insulating layers that reduce parasitic capacitance by distributing gate lines and using insulating materials with lower dielectric constants
Data Source
AI summary
A semiconductor device may include: a first gate structure including first gate lines, a first step structure including first pads, a first gap-fill insulating layer located between the first gate lines and the first step structure, and first wiring lines connecting the first gate lines and the first pads, respectively; and a second gate structure including second gate lines located on the first gate lines, a second step structure located on the first gap-fill insulating layer and including second pads, a second gap-fill insulating layer located on the first step structure, and second wiring lines connecting the second gate lines and the second pads, respectively.