Stacked Imaging Element Oxide Layer for Efficient Charge Transfer

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Solution Overview

Problem

Current stacked imaging elements face challenges in efficiently transferring electric charge due to complex configurations and lack of specific material compositions, leading to reduced manufacturing yield and suboptimal charge transfer characteristics.

Innovation Solution

The implementation of a photoelectric conversion section with an inorganic oxide semiconductor material layer, comprising a first and second layer with specific density and oxygen deficiency generation energy profiles, formed between the first electrode and the photoelectric conversion layer, to enhance charge transfer efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a complex configuration with multiple insulating layers and electrodes is used to transfer signal charge, then charge transfer capability is improved, but device complexity increases

Engineering Contradiction:

Improvecharge transfer capabilityVSAvoidstructure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent extracts and eliminates unnecessary insulating layers and complex electrode configurations from the charge transfer path. By removing redundant components while retaining the essential charge transfer function, the invention simplifies the device structure without compromising charge transfer capability, directly resolving the contradiction between reliability and device complexity

Inventive Principle:

Principle #2Taking out (Extraction)

Solution Approach 2:

Instead of adding more insulating layers and electrodes to improve charge transfer, the invention inverts the approach by removing these components. The simplified structure allows for more efficient charge transfer through reduced interface resistance and fewer barriers, demonstrating that less can achieve more in this context

Inventive Principle:

Principle #13The other way round (Inversion)

2Reliability

If specific material compositions are specified to improve charge transfer characteristics, then charge transfer efficiency is improved, but manufacturing precision requirements increase

Engineering Contradiction:

Improvecharge transfer efficiencyVSAvoidmaterial composition control

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The patent specifies precise parameter ranges for the inorganic oxide semiconductor material, including oxygen deficiency generation energy (2.5-4.0 eV) and density (5.5-6.5 g/cm³). By defining these parameter ranges, the invention achieves excellent charge transfer characteristics while providing clear manufacturing guidelines that balance performance requirements with manufacturing feasibility

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The invention employs inorganic oxide semiconductor materials with specific compositional characteristics, such as oxygen-deficient structures, to achieve superior charge transfer efficiency. The use of composite material approaches with controlled oxygen content and specific oxide compositions allows for optimized charge transfer while maintaining manufacturability through well-established materials processing techniques

Inventive Principle:

Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration simplifies the structure while achieving excellent charge transfer characteristics, reducing manufacturing complexity and improving the quality of captured images by ensuring efficient electric charge accumulation and transfer.

Implementation Method 1

a photoelectric conversion layer (light receiving layer) is placed between two electrodes... it is necessary that the stacked imaging element have a structure for accumulating and transferring signal charge generated in the photoelectric conversion layer on the basis of photoelectric conversion

Methodology Applied

Scientific EffectPhotoelectric conversion: Photoelectric Effect

Implementation Method 2

an inorganic oxide semiconductor material layer including a first layer and a second layer is formed between the first electrode and the photoelectric conversion layer

Methodology Applied

Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS12144192B2Imaging element, stacked imaging element and solid-state imaging device, and method of manufacturing imaging element

Publication Date: 2024.11.12 SONY GROUP CORP

AI summary

An imaging element includes a photoelectric conversion section 23 including a first electrode 21, a photoelectric conversion layer 23A including an organic material, and a second electrode 22 that are stacked. An inorganic oxide semiconductor material layer 23B including a first layer 23C and a second layer 23D, from side of the first electrode, is formed between the first electrode 21 and the photoelectric conversion layer 23A, and ρ1≥5.9 g/cm3 and ρ1−ρ2≥0.1 g/cm3 are satisfied, where ρ1 is an average film density of the first layer 23C and ρ2 is an average film density of the second layer 23D in a portion extending for 3 nm from an interface between the first electrode 21 and the inorganic oxide semiconductor material layer 23B.