Stacked Memory Bonding Layout for Transistor Heat Dissipation
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Solution Overview
Problem
Semiconductor storage devices face challenges in maintaining high-speed operation over time due to heat generation from prolonged high-speed operations, which complicates efficient heat dissipation and affects performance.
Innovation Solution
The semiconductor storage device incorporates a heat dissipation structure with interconnects and bonding pad electrodes that absorb and dissipate heat generated by transistors outside the memory die, using materials like copper for efficient heat absorption and dissipation through bonding wires, without relying on transistors in the current path.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If transistors operate at high speed for prolonged periods, then processing speed is improved, but heat generation increases causing performance degradation
Solution Approach 1:
The patent extracts the heat dissipation function from the transistor structure by introducing separate bonding pad electrodes that are electrically connected to the memory cell array but do not contain transistors in their current path. These dedicated heat dissipation paths allow thermal energy to be conducted away from the memory cell array without the interference of transistor-generated heat, enabling sustained high-speed operation.
Solution Approach 2:
The bonding pad electrodes serve as intermediary structures that provide a thermal conduction path between the memory cell array and the external environment. These electrodes act as heat sinks that absorb and dissipate heat generated by the memory cell array, preventing temperature buildup while maintaining electrical connectivity.
2Temperature
If heat dissipation structures are added to manage thermal energy, then temperature control is improved, but device complexity increases
Solution Approach 1:
The bonding pad electrodes perform multiple functions: they provide electrical connection to the memory cell array, serve as heat dissipation paths, and act as bonding interfaces for wire connections. By making these existing structures multi-functional, the patent achieves effective heat management without adding separate dedicated heat dissipation components that would increase device complexity.
Solution Approach 2:
The bonding pad electrodes inherently provide heat dissipation functionality through their material properties and geometric configuration. The copper-based materials and extended surface area of the bonding pads naturally conduct and dissipate heat without requiring active cooling mechanisms or complex thermal management systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables effective heat management, allowing the memory die to operate at high speeds for extended periods by efficiently dissipating heat generated by transistors, thereby maintaining performance and reducing the need to slow down operations due to temperature thresholds.
Implementation Method 1
a heat dissipation structure with interconnects and bonding pad electrodes that absorb and dissipate heat generated by transistors
Implementation Method 2
using materials like copper for efficient heat absorption and dissipation
Data Source
AI summary
A semiconductor storage device includes a first chip and a second chip. The first chip includes a semiconductor substrate, transistors, a first interconnect, and first bonding electrodes. The second chip includes a memory cell array and second bonding electrodes. The second bonding electrodes are bonded to the first bonding electrodes. The first chip or the second chip has bonding pad electrodes. The second bonding electrodes include third bonding electrodes and fourth bonding electrodes. The third and fourth bonding electrodes overlap the memory cell array. The third bonding electrodes are in a current pathway between the memory cell array and the transistors whereas the fourth bonding electrodes are not in such a current pathway. The first interconnect is electrically connected to a bonding pad electrode and a fourth bonding electrode directly, without a current path via any one of transistors.