Stacked Micro-LED Light Emitters for Precise RGB Display Integration
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Solution Overview
Problem
The challenge lies in manufacturing and arranging large numbers of red, green, and blue micro-LED chips on a display substrate for micro-LED display apparatuses, as current transcription technologies face difficulties in achieving precise placement and efficient production.
Innovation Solution
A monolithic light emitting device with an epitaxial structure is developed, featuring vertically stacked light emitting elements of different wavelengths, utilizing a PN junction layer with specific conductivity type semiconductor layers and doping concentrations, and nitride semiconductor materials to emit light of varying wavelengths, allowing for independent driving and minimal interference between elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If transcription technology is used to manufacture and arrange micro-LED chips, then large numbers of red, green, and blue LED chips can be produced, but precise placement and efficient production become difficult
Solution Approach 1:
The patent transitions from planar arrangement of micro-LED chips to a vertical stacked configuration where multiple light emitting elements are arranged in the vertical dimension. This allows multiple LEDs to be integrated within a compact footprint, eliminating the need for precise lateral placement while maintaining high production efficiency.
Solution Approach 2:
The patent combines multiple light emitting elements of different colors (red, green, blue) into a single vertically stacked structure. This merging approach allows all color components to be produced and arranged together in one manufacturing process, eliminating the complex transcription process required for separate chip placement.
2Manufacturing precision
If multiple light emitting elements of different wavelengths are integrated in a single device, then high-resolution displays can be achieved, but interference between elements may increase
Solution Approach 1:
The patent introduces a PN junction layer as an intermediary component between adjacent light emitting elements. This PN junction layer acts as an electrical barrier that prevents current leakage and interference between elements while allowing optical signals to pass through, thus enabling high-resolution displays without cross-talk.
Solution Approach 2:
The patent applies different conductivity types (n-type and p-type) to different layers within the stacked structure. By locally varying the electrical properties of each layer, the device achieves both high integration precision and isolation between elements, preventing interference while maintaining efficient operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables the efficient production and arrangement of micro-LEDs with different wavelengths, facilitating the creation of high-resolution displays without the need for complex chip transfer technologies, while ensuring minimal interference between light emitting elements.
Implementation Method 1
an active layer configured to emit light and provided between the first nitride semiconductor material and the second nitride semiconductor material in the vertical direction
Implementation Method 2
a PN junction layer provided on the first light emitting element and configured to prevent interference between light emitting elements, and a second light emitting element provided on the PN junction layer
Data Source
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Figure 3A
AI summary
The present disclosure provides light emitting devices (100) and display apparatuses including the same. In some embodiments, a light emitting device (100) includes a first light emitting element (110) configured to emit light of a first wavelength, a PN junction layer (120) provided on the first light emitting element (110), and a second light emitting element (130) provided on the PN junction layer (120) and configured to emit light of a second wavelength different from the first wavelength. The PN junction layer (120) includes a first conductivity type semiconductor layer (121) provided on the first light emitting element (110) and doped with impurities of a first conductivity type, and a second conductivity type semiconductor layer (122) provided on the first conductivity type semiconductor layer (121) and doped with impurities of a second conductivity type electrically opposite to the first conductivity type.