Stacked Optical Chip Pad Layout for Parasitic Capacitance Control

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Solution Overview

Problem

In optical communication devices, the miniaturization trend leads to increased parasitic capacitance due to closer channel arrangements, affecting high-frequency signal quality, especially at higher transmission rates like 64 Gbaud, where electrostatic capacitance between pads and the substrate degrades signal quality.

Innovation Solution

The optical communication device design features electrode pads on semiconductor chips positioned such that their center points lie on parallel straight lines, reducing parasitic capacitance by widening the intervals between pads and maintaining signal quality, even at higher transmission rates.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If channels are arranged closer together to achieve miniaturization, then device size is reduced, but parasitic capacitance increases and high-frequency signal quality deteriorates

Engineering Contradiction:
Improvedevice sizeVSAvoidparasitic capacitance
Core Design Contradiction:
Volume of moving objectVSObject-affected harmful factors

Solution Approach 1:

The patent transitions from a two-dimensional planar arrangement of pads to a three-dimensional stacked arrangement. First chip and second chip are positioned at different heights (vertical dimension), with pads on each chip arranged on parallel straight lines. This spatial separation in the vertical dimension reduces parasitic capacitance between corresponding pads while maintaining compact horizontal footprint, thus achieving miniaturization without sacrificing signal quality.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Reliability

If pad size is increased to ensure reliable electrical connection, then connection reliability is improved, but parasitic capacitance increases and high-frequency characteristics deteriorate

Engineering Contradiction:
Improveconnection reliabilityVSAvoidparasitic capacitance
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent changes the spatial parameter of pad arrangement by positioning pad centers on parallel straight lines rather than in a grid pattern. This specific geometric configuration, combined with the vertical stacking of chips, optimizes the electric field distribution and reduces parasitic capacitance while maintaining adequate pad size for reliable electrical connection.

Inventive Principle:
Principle #35Parameter changes

3Productivity

If transmission rate is increased to achieve higher communication capacity, then communication capacity is improved, but signal quality deteriorates due to increased sensitivity to parasitic capacitance

Engineering Contradiction:
Improvecommunication capacityVSAvoidsignal quality
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

By utilizing the vertical dimension through chip stacking, the patent reduces the horizontal area required for pad arrangements. This allows corresponding pads to be positioned closer in the vertical direction while maintaining appropriate horizontal spacing, thereby reducing parasitic capacitance effects that would otherwise limit high-speed signal transmission and enabling higher communication capacities.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS20240379644A1Optical Communication Device
Publication Date: 2024.11.14 NT T INC
  • US20240379644A1 patent drawing
  • US20240379644A1 patent drawing
  • US20240379644A1 patent drawing

AI summary

An optical communication device includes: a semiconductor chip that includes an optical waveguide formed in the semiconductor chip, and G pads, a P pad, and S pads for outputting electrical signals indicating intensity of light propagating in the optical waveguide; and a semiconductor chip that includes G pads and S pads electrically connected to the G pads, the P pad, and the S pads, and is connected to the semiconductor chip, wherein the center points of at least some of the S pads are located on straight lines on at least one of the chips, the straight lines being parallel to sides, and the center points of the other electrode pads are located on other straight lines farther from the sides than the straight lines.