Stacked Semiconductor Package Structure for Dense Die Interconnects
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Solution Overview
Problem
The semiconductor industry faces challenges in miniaturization, higher speed, and lower power consumption, necessitating innovative packaging techniques for semiconductor devices, particularly in stacked semiconductor devices like 3DICs, where traditional methods may not provide sufficient integration density, connectivity, and reliability.
Innovation Solution
A package structure with stacked memory and logic dies connected through a redistribution layer (RDL) and interconnect structures, utilizing u-bump flip chip and metal-polymer hybrid bonding, enabling high-density connections and reliable communication, and incorporating heat dissipation features for efficient thermal management.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If traditional packaging methods are used for semiconductor devices, then manufacturing simplicity is maintained, but integration density and connectivity are insufficient
Solution Approach 1:
The patent implements package-on-package (POP) stacking where multiple packaged dies are vertically stacked and interconnected through through-silicon vias (TSVs). This nesting approach achieves high integration density by placing multiple functional packages within a compact vertical footprint, resolving the contradiction between quantity of substance and device complexity.
Solution Approach 2:
The transition from traditional planar packaging to three-dimensional stacked packaging adds a vertical dimension to the packaging architecture. Multiple dies are stacked in the Z-direction and connected via TSVs, enabling high integration density without increasing lateral footprint, thus resolving the contradiction between integration density and structural complexity.
2Quantity of substance
If minimum feature size is reduced to increase integration density, then more components can be integrated, but manufacturing precision requirements increase
Solution Approach 1:
The patent segments the semiconductor system into multiple separate packaged dies that are stacked and interconnected. Each die can be manufactured independently at optimized process nodes, avoiding the need to shrink all features uniformly. This segmentation allows high integration density through stacking while maintaining relaxed manufacturing precision requirements for individual dies.
Solution Approach 2:
Through-silicon vias (TSVs) serve as intermediary structures that enable vertical interconnection between stacked dies. The TSVs provide a standardized interface that simplifies the bonding process and reduces the precision requirements for aligning fine-pitch connections between dies, thereby resolving the contradiction between integration density and manufacturing precision.
3Volume of moving object
If stacked semiconductor devices are implemented to reduce physical size, then form factor is reduced, but connectivity and reliability challenges arise
Solution Approach 1:
The patent performs preliminary bonding of multiple dies to substrates before stacking them together. This preliminary action ensures proper alignment, electrical connection, and mechanical bonding strength before the final stacked assembly. By pre-establishing reliable connections on each die individually, the overall interconnect reliability of the stacked device is improved while maintaining compact form factor.
Solution Approach 2:
The patent employs composite interconnect structures combining copper TSVs, solder bumps, and underfill materials to achieve reliable vertical and lateral connections in the stacked architecture. The composite material system provides enhanced mechanical strength, thermal conductivity, and electrical performance, resolving the reliability challenges associated with reduced form factor stacked devices.
Data Source
AI summary
A semiconductor device and a method of making the same are provided. A first die and a second die are placed over a carrier substrate. A first molding material is formed adjacent to the first die and the second die. A first redistribution layer is formed overlying the first molding material. A through via is formed over the first redistribution layer. A package component is on the first redistribution layer next to the copper pillar. The package component includes a second redistribution layer. The package component is positioned so that it overlies both the first die and the second die in part. A second molding material is formed adjacent to the package component and the first copper pillar. A third redistribution layer is formed overlying the second molding material. The second redistribution layer is placed on a substrate and bonded to the substrate.