Stacked Semiconductor Package With Low-Conductivity Front Cover Layer
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor packages face challenges in miniaturization and high-performance requirements, particularly in efficiently stacking semiconductor chips with through-silicon-vias (TSVs) while managing heat loss during manufacturing processes.
Innovation Solution
A semiconductor package design incorporating a first semiconductor chip with a front cover layer of low thermal conductivity, connection pillars, and an adhesive film layer to minimize heat loss during thermocompression bonding, along with a stacked configuration of semiconductor chips and connection bumps for improved efficiency and reduced costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a conventional thermocompression bonding process is used without a front cover layer, then the bonding process is simpler, but heat loss during bonding increases reducing manufacturing efficiency
Solution Approach 1:
A front cover layer is introduced as an intermediary component between the bonding tool and the semiconductor chip during thermocompression bonding. This front cover layer acts as a heat mediator that reduces heat loss from the bonding interface, thereby improving heating efficiency and manufacturing productivity without complicating the bonding process itself
2Productivity
If the front cover layer has high thermal conductivity, then heat dissipation is improved, but heat loss during bonding increases reducing bonding efficiency
Solution Approach 1:
The thermal conductivity parameter of the front cover layer is specifically optimized to be lower than that of the interlayer insulating layer and substrate. This parameter change ensures that heat is retained at the bonding interface during thermocompression bonding, improving bonding efficiency while still allowing for adequate heat dissipation after bonding through other thermal management paths
3Volume of moving object
If semiconductor chips are stacked vertically to achieve miniaturization, then device size is reduced, but heat management becomes more complex
Solution Approach 1:
Different regions of the semiconductor package are assigned different thermal properties: the front cover layer has low thermal conductivity to retain heat during bonding, while the interlayer insulating layer and substrate have higher thermal conductivity for heat dissipation. This local quality differentiation enables effective heat management in the compact vertically-stacked configuration without increasing overall device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design enhances manufacturing efficiency and reduces costs by minimizing heat loss during bonding processes, thereby improving the overall performance and miniaturization of semiconductor packages.
Implementation Method 1
a thermal conductivity of the front cover layer is smaller than a thermal conductivity of the first interlayer insulating layer and a thermal conductivity of the first substrate
Implementation Method 2
an adhesive film layer disposed between the first semiconductor chip and the second semiconductor chip
Data Source
AI summary
A semiconductor package includes a first semiconductor chip including a first substrate having a first front surface and a first rear surface, first front pads, a first interlayer insulating layer between the first front pads and the first substrate, and a first interconnection structure in the first interlayer insulating layer and connected to the first front pads, and a front cover layer on the first interlayer insulating layer and including openings respectively exposing at least a portion of each of the first front pads, where a thermal conductivity of the front cover layer is smaller than a thermal conductivity of the first interlayer insulating layer and a thermal conductivity of the first substrate.


