Stacked Semiconductor Package With Embedded Thermal Structures
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving efficient heat dissipation and reliability in stacked semiconductor devices due to the limitations of existing bonding and packaging techniques, which hinder further reduction in physical size and integration density.
Innovation Solution
The formation of thermal structures within a gap-filling material with high thermal conductivity improves heat dissipation by integrating materials like copper, copper alloys, or dielectric materials with high thermal conductivity, enhancing device operation and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional bonding and packaging techniques are used, then device structure is simple, but heat dissipation efficiency is poor and device size cannot be further reduced
Solution Approach 1:
The patent implements a nested structure where a support structure is integrated within the packaging structure, which in turn contains the bonded semiconductor devices. This multi-level nesting allows heat dissipation pathways to be embedded within the package without adding external complexity, resolving the contradiction between heat dissipation efficiency and device complexity.
Solution Approach 2:
The patent employs composite material structures combining different materials with complementary properties - the support structure provides mechanical strength and thermal management, while the packaging material provides protection and additional thermal pathways. This composite approach enables superior heat dissipation without proportionally increasing structural complexity.
2Quantity of substance
If stacked and bonded semiconductor devices are used, then integration density increases, but thermal effects worsen due to poor heat dissipation
Solution Approach 1:
The patent transitions from planar heat dissipation to three-dimensional heat management by implementing vertical heat pathways through the stacked device architecture. The support structure and packaging create multiple thermal pathways in the vertical dimension, enabling effective heat dissipation from high-density stacked devices without exacerbating thermal effects.
Solution Approach 2:
The support structure serves as an intermediary element between the bonded semiconductor devices and the external environment. It mediates thermal management by providing a dedicated thermal pathway that interfaces with the packaging, allowing heat from high-density devices to be efficiently transferred outward without directly compromising device performance.
3Reliability
If thermal structures with high thermal conductivity are integrated, then heat dissipation improves, but device structure becomes more complex
Solution Approach 1:
The support structure is designed to perform multiple functions simultaneously: providing mechanical support for the bonded devices, establishing thermal pathways for heat dissipation, and serving as a structural foundation for the packaging. This multi-functionality enables improved reliability through better thermal management without proportionally increasing device complexity.
Solution Approach 2:
The patent merges the support structure and thermal management functions into a single integrated component rather than adding separate thermal structures. By combining structural support and heat dissipation pathways into the support structure itself, the design achieves improved reliability while minimizing the increase in overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation of thermal structures with high thermal conductivity addresses the heat dissipation challenges, improving device operation and reliability, allowing for more flexible encapsulant material selection and reduced thermal effects.
Implementation Method 1
thermal structures comprising a high thermal conductivity material formed within a gap-filling material having a lower thermal conductivity
Data Source
AI summary
A device includes a first semiconductor device including a first bonding layer; a second semiconductor device bonded to the first bonding layer of the first semiconductor device; thermal structures disposed beside the second semiconductor device and on the first bonding layer, wherein the thermal structures include a conductive material, wherein the thermal structures are electrically isolated from the first semiconductor device and from the second semiconductor device; an encapsulant disposed on the first bonding layer, wherein the encapsulant surrounds the second semiconductor device and surrounds the thermal structures; and a second bonding layer disposed over the encapsulant, the thermal structures, and the second semiconductor device.