Stacked Passive Semiconductor Structure With TSVs for ESD and Footprint Limits
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Solution Overview
Problem
Current semiconductor devices embedded in packaging substrates face limitations in size and electrical characteristics, particularly lacking electrostatic discharge (ESD) protection and having fixed thickness, which restricts their performance and adaptability.
Innovation Solution
A semiconductor device with multiple stacked passive devices, comprising a first-tier passive device and one or more second-tier passive devices, where each tier includes a substrate, passive device, and metallization portion in a stacked configuration, connected through through-substrate vias (TSVs) for adjustable thickness and enhanced electrical characteristics, including ESD protection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single passive device is embedded in a packaging substrate, then the device thickness is fixed and matches the substrate core thickness, but the electrical characteristics are limited and ESD protection is not provided
Solution Approach 1:
The passive device is divided into multiple tiers (first-tier and second-tier passive devices) with distinct functions. The first-tier provides ESD protection through its passive device portion, while the second-tier enhances electrical characteristics (capacitance/inductance). This segmentation allows each tier to be optimized for its specific function, resolving the contradiction by adding protection capability without requiring a completely new complex structure.
Solution Approach 2:
The second-tier passive device is disposed over the first-tier passive device in a stacked configuration, with the first-tier metallization portion electrically coupled to the second-tier through TSVs. This nested arrangement allows the ESD protection function and enhanced electrical characteristics to be integrated within the same device footprint, improving reliability without proportionally increasing overall device complexity.
2Area of stationary object
If the passive device size is reduced to achieve small form factor products, then package size is reduced, but the electrical characteristics are limited
Solution Approach 1:
The patent transitions from a single-layer passive device to a three-dimensional stacked configuration with first-tier and second-tier passive devices vertically arranged. This dimensional change allows the device to maintain a small footprint (area) while achieving enhanced electrical characteristics through the combined effect of multiple passive device portions stacked in the vertical dimension. The TSVs provide electrical coupling between tiers, enabling this vertical integration without increasing the horizontal package size.
3Adaptability or versatility
If multiple stacked passive devices are implemented, then adjustable thickness and enhanced electrical characteristics are achieved, but device complexity increases
Solution Approach 1:
The stacked configuration with first-tier and second-tier passive devices provides adjustable thickness capability. By varying the number of tiers, the thickness of the passive device can be adapted to match different packaging substrate core thicknesses. This dynamic adaptability is achieved through a modular structure where each tier follows a consistent pattern (substrate portion, passive device portion, metallization portion), allowing scalability without proportionally increasing complexity.
Solution Approach 2:
Each tier in the stacked configuration serves multiple functions: the substrate portion provides mechanical support, the passive device portion provides electrical function (capacitance/inductance), and the metallization portion provides electrical connection. This multi-functionality at each tier level allows the overall device to achieve adjustable thickness and enhanced electrical characteristics while maintaining relatively manageable complexity through standardized modular design.
Data Source
AI summary
Disclosed is a semiconductor device. In an aspect, a semiconductor device includes: a first-tier passive device including a substrate portion, a passive device portion, and a metallization portion disposed in a stacked configuration; and one or more second-tier passive devices disposed over the first-tier passive device. Each one of the one or more second-tier passive devices includes: a substrate portion, a passive device portion, and a metallization portion disposed in a stacked configuration; and a set of through substrate vias (TSVs) passing through a corresponding substrate portion and electrically coupled to a corresponding metallization portion. The semiconductor device comprises a passive component including the passive device portion of the first-tier passive device electrically coupled to one or more passive device portions of the one or more second-tier passive devices through the metallization portions of the first-tier passive device and the one or more second-tier passive devices.