Stacked Power Converter Packaging for Bootstrap Diode Integration
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Solution Overview
Problem
High-voltage integrated circuits face challenges with bootstrap diode formation using SOI or CMOS technology, which requires specific substrates and high wafer costs, and complex control processes, limiting flexibility and increasing packaging volume.
Innovation Solution
A stacked packaging structure incorporating a lead frame, die, patterned insulation layers, and electrical interconnection structures, which avoids the technical barriers of SOI or CMOS technology by using a regular silicon diode and polyimide passivation, allowing for flexible layout and reduced pin count, and includes adhesive layers and etching processes for enhanced electrical connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If SOI or CMOS technology is used for bootstrap diode formation, then high-voltage integrated circuits can be manufactured, but specific substrates are required and wafer costs increase
Solution Approach 1:
The patent replaces expensive SOI or CMOS substrates with a standard silicon substrate and a separate low-cost bootstrap diode. The diode is formed using conventional silicon technology rather than requiring expensive specialized substrates, significantly reducing material costs while maintaining high-voltage circuit functionality
Solution Approach 2:
The patent separates the high-voltage integrated circuit from the bootstrap diode, allowing the diode to be formed independently on a separate silicon substrate. This segmentation enables the use of standard silicon substrates for the IC while the diode can be manufactured using conventional, less expensive processes
2Reliability
If SOI or CMOS technology is used for bootstrap diode formation, then high-voltage integrated circuits can be manufactured, but the control process becomes complex
Solution Approach 1:
The patent uses a conventional silicon-based diode instead of requiring complex SOI or CMOS process control. This simplifies the manufacturing control process significantly, as standard silicon diode formation processes are well-established and less complex than specialized high-voltage substrate processes
Solution Approach 2:
The patent introduces a separate bootstrap diode as an intermediary component that simplifies the overall system. Rather than integrating complex high-voltage diode formation into the IC process, the separate diode acts as a mediator that can be formed using simpler, more controllable conventional processes
3Ease of manufacture
If conventional packaging is used for high-voltage integrated circuits, then manufacturing is straightforward, but packaging volume increases
Solution Approach 1:
The patent merges the high-voltage integrated circuit and the bootstrap diode into a single stacked packaging structure. The IC and diode are vertically stacked and electrically connected through conductive vias, combining two components into one compact package unit that reduces overall volume compared to separate packaging
Solution Approach 2:
The patent transitions from a planar packaging arrangement to a three-dimensional stacked configuration. By stacking the IC and diode vertically and connecting them through conductive vias, the design utilizes the vertical dimension to reduce the footprint and overall packaging volume while maintaining all necessary electrical connections
Data Source
AI summary
A stacked packaging structure can include: a lead frame; a die located on a first surface of the lead frame; an electrical interconnection structure located above the die and configured to be electrically connected with corresponding electrodes of the die; a diode located on the electrical interconnection structure; and where a lower surface of the diode is electrically connected to the electrical interconnection structure, and the electrode on an upper surface of the diode is connected to the corresponding pins of the lead frame.