Stacked Semiconductor Device for Multi-Spectral Light Detection
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Solution Overview
Problem
Existing semiconductor integrated circuits face challenges in effectively detecting different bands of light due to top layers blocking certain light bands from reaching the sensing circuits, which limits their performance in capturing images across multiple spectral bands.
Innovation Solution
A stacked semiconductor device structure is implemented, where a visible light sensing layer and an infrared light sensing layer are positioned on top, with a circuitry layer at the bottom, utilizing Hybrid Bonding Technology and through-silicon vias to ensure that infrared light is not blocked, allowing for efficient conversion of both visible and infrared light into electrical signals.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a traditional planar integrated circuit structure is used, then manufacturing process is simple, but the top layer blocks certain bands of light from reaching the sensing circuit
Solution Approach 1:
The patent transitions from a planar integrated circuit structure to a three-dimensional stacked structure. The sensing circuit layer is positioned beneath the circuitry layer, with light incident ports on the bottom surface allowing light to enter directly from below. This vertical stacking arrangement eliminates the light blocking problem inherent in planar structures where the top layer would obstruct light paths to the sensing circuits.
2Measurement precision
If a stacked structure with sensing layers on top is used, then light detection performance improves, but device complexity increases
Solution Approach 1:
The patent employs a vertical stacked architecture where the sensing circuit layer is positioned beneath the circuitry layer, with light incident ports on the bottom surface. This three-dimensional arrangement allows multiple sensing functions (visible light and infrared detection) to be integrated in the vertical dimension, improving light detection performance while managing device complexity through efficient spatial utilization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the performance of light detection by preventing interference from the circuitry layer, allowing for better conversion of infrared and visible light into electrical signals compared to traditional methods, thereby improving image sensing capabilities.
Implementation Method 1
The photodiode layer is configured to have a first photodiode and a second photodiode. The first photodiode is arranged to generate a first electrical signal in response to visible light in the incident light
Implementation Method 2
The germanium layer is configured to have a first photodiode and a second photodiode. The first photodiode is arranged to generate a first electrical signal in response to infrared light in the incident light
Implementation Method 3
A first microlens and a second microlens are formed on the silicon layers on the germanium selective epitaxials respectively. The first microlens and the second microlens are arranged to focus the incident light on the first photodiode and the second photodiode, respectively
Data Source
AI summary
A semiconductor device includes: a visible light sensing layer, having a first surface and a second surface opposite to the first surface; an infrared ray sensing layer, having a first surface and a second surface opposite to the first surface, and the first surface of the visible light sensing layer attached to the second surface of the infrared ray sensing layer; and a circuitry layer, having a first surface and a second surface opposite to the first surface, and the first surface of the infrared ray sensing layer attached to the second surface of the circuitry layer.