Stacked Semiconductor Layer Bonding to Minimize Thermal Warpage

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Solution Overview

Problem

Semiconductor devices experience thermal deformation such as warpage or shrink during subsequent thermal processes, particularly in stacked semiconductor devices, which can affect the reliability and performance of the devices.

Innovation Solution

The semiconductor device manufacturing method involves forming plugs in the substrates before bonding the upper and lower layers, which helps prevent thermal deformation by allowing for better thermal management and stress distribution.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If multiple layers are stacked to achieve high integration, then the chip area is reduced, but thermal deformation such as warpage or shrink occurs during subsequent thermal processes

Engineering Contradiction:
Improvechip areaVSAvoidthermal deformation
Core Design Contradiction:
Area of stationary objectVSReliability

Solution Approach 1:

The patent applies preliminary action by forming plugs in the substrates before bonding the upper and lower layers. This pre-forming of plugs allows for better thermal management and stress distribution to be built into the structure before thermal processes occur, preventing warpage and shrink that would otherwise compromise the stacked device reliability

Inventive Principle:
Principle #10Preliminary action

2Ease of manufacture

If substrates are bonded directly without pre-formed plugs, then the manufacturing process is simpler, but thermal deformation occurs affecting device reliability

Engineering Contradiction:
Improvebonding process simplicityVSAvoidthermal deformation
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent implements preliminary action by forming plugs in substrates before bonding. This pre-preparation of plugs in each substrate prior to bonding creates internal stress management structures that prevent thermal deformation during subsequent processing, thereby improving reliability without significantly complicating the overall manufacturing flow

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS20250133858A1Semiconductor device and method for manufacturing the same
Publication Date: 2025.04.24 SK HYNIX INC
  • US20250133858A1 patent drawing
  • US20250133858A1 patent drawing
  • US20250133858A1 patent drawing

AI summary

The present disclosure relates to a semiconductor device manufacturing method that includes: forming a first layer including a first substrate, a first plug formed in the first substrate, a photodiode, and a first wiring layer; forming a second layer including a second substrate, a second plug formed in the second substrate, and a second wiring layer; forming a third layer including a third substrate and a third wiring layer; bonding the first wiring layer of the first layer to the second wiring layer of the second layer; and bonding the second substrate of the second layer to the third wiring layer of the third layer.