Staggered Die Stacking for Dense Semiconductor Packaging

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Solution Overview

Problem

The challenge in semiconductor device assembly is to increase circuit density without increasing device footprint, while overcoming mechanical and thermal challenges in compact stacked devices, where current manufacturing equipment struggles with small interconnects and heat regulation in high-density devices.

Innovation Solution

A semiconductor device assembly with a staggered stack of semiconductor dies, where dies are directly bonded using conductive or dielectric materials, and conductive structures are implemented outside the overlapping portion to reduce spacing and enhance thermal performance, allowing for increased density without the need for non-conductive films.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If the thickness of semiconductor dies is decreased to increase circuit density, then the number of circuit elements increases, but mechanical stability and thermal regulation become more difficult to maintain

Engineering Contradiction:
Improvecircuit densityVSAvoidmechanical stability
Core Design Contradiction:
Quantity of substanceVSStrength

Solution Approach 1:

The patent transitions from planar stacking to three-dimensional staggered stacking, where dies are positioned at different horizontal offsets and vertical levels. This dimensional change allows for increased circuit density while maintaining structural integrity through the interlocking configuration, resolving the contradiction between thinning dies for density and maintaining mechanical stability.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent employs composite interconnect structures combining conductive materials (for electrical connection) and dielectric materials (for mechanical support and insulation). This composite approach enables the use of thinner dies by providing robust external support structures that compensate for the reduced mechanical strength of thinner die layers.

Inventive Principle:
Principle #40Composite materials

2Quantity of substance

If the thickness of semiconductor dies is decreased to increase circuit density, then the number of circuit elements increases, but thermal regulation becomes more difficult

Engineering Contradiction:
Improvecircuit densityVSAvoidthermal regulation
Core Design Contradiction:
Quantity of substanceVSTemperature

Solution Approach 1:

The staggered three-dimensional arrangement creates expanded thermal pathways and increased surface area for heat dissipation. The offset positioning of dies allows heat to dissipate in multiple directions rather than being confined to a compact vertical stack, improving thermal regulation despite increased circuit density.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent segments the thermal management approach by creating separate thermal zones through the staggered configuration. Each die has its own thermal pathway to external heat sinks, preventing heat accumulation and improving overall thermal regulation in high-density configurations.

Inventive Principle:
Principle #1Segmentation

3Reliability

If conventional packaging processes are used with bond pads and encapsulation, then protection from environmental factors is achieved, but device footprint increases

Engineering Contradiction:
Improveprotection from environmental factorsVSAvoiddevice footprint
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent extracts and eliminates the traditional encapsulation layer and bond pad structures by implementing direct bonding between dies. This removal of unnecessary components reduces device footprint while maintaining protection through the direct interconnect structure and selective use of protective coatings only where needed.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent merges the functions of electrical interconnection and environmental protection into a single integrated structure. The direct bond interfaces serve both as electrical connections and as sealed barriers against environmental factors, eliminating the need for separate encapsulation layers and reducing overall device footprint.

Inventive Principle:
Principle #5Merging (Combining)

4Quantity of substance

If spacing between adjacent semiconductor dies is reduced to increase density, then circuit density increases, but manufacturing precision requirements increase due to small interconnects

Engineering Contradiction:
Improvecircuit densityVSAvoidinterconnect size
Core Design Contradiction:
Quantity of substanceVSManufacturing precision

Solution Approach 1:

The patent introduces intermediary structures such as conductive pillars, microbumps, and dielectric support layers that mediate the connection between closely spaced dies. These intermediary elements provide robust mechanical and electrical connections that are easier to manufacture with standard equipment, reducing the precision requirements for direct die-to-die interconnects while maintaining high circuit density.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enables a compact, high-density semiconductor device with improved thermal performance and mechanical stability, allowing for efficient heat dissipation and increased circuit elements within the limited spatial constraints.

Implementation Method 1

first conductive structures that electrically couple the first semiconductor die and the substrate

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Implementation Method 2

second conductive structures that electrically couple the second semiconductor die and the substrate

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS20240306403A1Stacked semiconductor device
Publication Date: 2024.09.12 MICRON TECHNOLOGY INC
  • US20240306403A1 patent drawing
  • US20240306403A1 patent drawing
  • US20240306403A1 patent drawing

AI summary

A semiconductor device is provided that can include a substrate and a first and second stack of semiconductor dies coupled to the substrate. The first stack of semiconductor dies and the second stack of semiconductor dies are staggered such that the first stack of semiconductor dies has a first footprint and the second stack of semiconductor dies has a second footprint that partially overlaps the first footprint. The first stack of semiconductor dies and the second stack of semiconductor dies are alternated such that each semiconductor die of the first stack of semiconductor dies is vertically mounted to a respective semiconductor die of the second stack of semiconductor dies. Conductive structures extend between portions of the first and second stacks of semiconductor dies exposed beyond the second footprint and the first footprint, respectively, to electrically couple the semiconductor dies.