Staircase Gate Stack Layout for Dense Semiconductor Connections
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Solution Overview
Problem
The increasing number of stacked gate electrodes in semiconductor devices complicates the electrical connection process, leading to integration density challenges and unexpected defects.
Innovation Solution
A semiconductor device design featuring a stack structure with a staircase configuration in the connection region, comprising a gate region and an insulating region, where the gate region includes conductive gate layers and the insulating region includes insulating mold layers, with specific pad structures and capping insulating layers to enhance integration density and connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the number of stacked gate electrodes is increased to improve integration density, then integration density is improved, but the difficulty of electrical connection process increases and unexpected defects occur
Solution Approach 1:
The connection structure is segmented into multiple levels with intermediate connection structures at different heights. The gate electrodes are divided into first gate electrodes and second gate electrodes at different vertical positions, allowing independent connection paths. This segmentation reduces the complexity of connecting all gate electrodes to peripheral circuits by creating modular connection stages.
Solution Approach 2:
The patent utilizes three-dimensional stacking with vertical extension of connection structures. Intermediate connection structures extend vertically to connect gate electrodes at different heights, transforming a two-dimensional connection problem into a three-dimensional solution. This allows multiple gate electrodes to be connected through vertical pathways rather than requiring complex lateral routing.
2Quantity of substance
If the number of stacked gate electrodes is increased to improve integration density, then integration density is improved, but unexpected defects occur
Solution Approach 1:
Insulating structures are placed beforehand between adjacent gate electrodes to prevent short circuits and electrical defects. These insulating layers act as protective barriers that cushion against potential electrical failures, ensuring reliable operation even as the number of stacked gate electrodes increases.
Solution Approach 2:
Intermediate connection structures serve as mediators between gate electrodes at different vertical levels and peripheral circuits. These intermediate structures provide controlled electrical pathways that reduce the risk of defects by creating standardized connection interfaces rather than direct complex interconnections.
Data Source
AI summary
A semiconductor device includes a lower structure and a stack structure that extends into a connection region on the lower structure, where the stack structure includes gate pads and mold pads. The mold pads include intermediate mold pads that include first intermediate mold pads and a second intermediate mold pad between a pair of the first intermediate mold pads, each of the first intermediate mold pads has a first length in a first direction, the second intermediate mold pad has a second length in the first direction, greater than the first length, one of the intermediate mold pads includes a mold pad portion and an insulating protrusion portion on the mold pad portion, one of the first intermediate mold pads includes the mold pad portion and the insulating protrusion portion, and a central region of the second intermediate mold pad does not include the insulating protrusion portion.