Integrated Standard Cell Layout With Continuous Active Regions
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Solution Overview
Problem
In integrated circuit design, the repeated use of standard cells with predefined rules leads to increased area requirements and inefficient electrical coupling between active regions, resulting in degraded performance due to spaced apart active regions that need to be connected with metal lines, affecting yield and design performance.
Innovation Solution
The proposed solution involves configuring standard cells and filler cells on a semiconductor substrate with continuous active regions and dielectric gates, where each standard cell is separated by a filler cell spanning one pitch dimension, ensuring continuous active regions and uniform gate distribution for improved packing density and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If standard cells are placed close to each other according to pre-defined rules, then routing efficiency is improved, but the reserved space between standard cells and cell boundaries increases the area of the standard cells
Solution Approach 1:
The patent merges adjacent standard cells by removing the isolation structures between them, allowing active regions to be continuous across cell boundaries. This combining approach eliminates the reserved space that would otherwise be required between cells, reducing the total area while maintaining routing efficiency.
Solution Approach 2:
The patent extracts and removes the isolation structures (such as deep trench isolation or shallow trench isolation) that traditionally separate standard cells. By taking out these isolation elements, the active regions can extend continuously across what would have been cell boundaries, reducing the area required for each standard cell while preserving electrical isolation where needed through alternative means.
2Manufacturing precision
If active regions are spaced apart from cell boundaries, then manufacturing precision is improved, but the active regions cannot be joined when standard cells are placed abutting each other, degrading device performance
Solution Approach 1:
The patent introduces alternative isolation mechanisms that act as intermediaries between adjacent standard cells. Instead of relying on spaced-apart active regions, the invention uses selective isolation structures (such as epitaxial isolation or localized dielectric layers) that allow active regions to be continuous and joined across cell boundaries while still providing the necessary electrical isolation. This mediator approach maintains both manufacturing precision and device performance.
Solution Approach 2:
The patent applies local quality by making the isolation characteristics location-dependent. Active regions are allowed to be continuous in areas where cells abut, while localized isolation structures are introduced only where electrical separation is needed. This local differentiation enables the active regions to be joined for improved performance while maintaining manufacturing precision through targeted isolation at specific locations rather than uniform spacing throughout.
Data Source
AI summary
An integrated circuit includes a first standard cell having a first pFET and a first nFET integrated, and having a first dielectric gate on a first standard cell boundary. The integrated circuit further includes a second standard cell being adjacent to the first standard cell, having a second pFET and a second nFET integrated, and having a second dielectric gate on a second standard cell boundary. The integrated circuit also includes a first filler cell configured between the first and second standard cells, and spanning from the first dielectric gate to the second dielectric gate. The first pFET and the second pFET are formed on a first continuous active region. The first nFET and the second nFET are formed on a second continuous active region.


