3D Semiconductor Package Standoff Substrate Integration
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Solution Overview
Problem
Current semiconductor packaging technologies face limitations in integrating high-K dielectric materials and passive components due to temperature constraints and fabrication boundaries, which restrict the thickness and configuration of standoff substrates, leading to increased parasitic resistance and inductance in 3D stacked configurations.
Innovation Solution
The use of hybrid bonding technology allows for the precise integration of high-K dielectric materials and passive components, such as capacitors, between dies through standoff substrates of varying thicknesses, decoupling their fabrication from the dies and enabling thicker, more customizable structures that reduce parasitic resistance and inductance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional semiconductor packaging technologies are used to integrate passive components, then fabrication processes are constrained by temperature limits and fabrication boundaries, but this results in increased parasitic resistance and inductance due to restricted standoff substrate thickness and configuration
Solution Approach 1:
The patent divides the semiconductor package into separate functional segments: active dies and a distinct standoff substrate layer. This segmentation allows the standoff substrate to be independently fabricated with optimized thickness and configuration for minimizing parasitics, while the active dies can be fabricated separately. The segmented structure enables independent optimization of each component's properties without mutual constraints.
Solution Approach 2:
The standoff substrate acts as an intermediary element between the active dies in the 3D stacked configuration. This intermediary layer is specifically designed with controlled thickness and material properties to minimize parasitic resistance and inductance while providing mechanical support and electrical isolation. The intermediary substrate decouples the fabrication constraints from the electrical performance requirements.
2Reliability
If thicker standoff substrates are used to reduce parasitic resistance, then electrical performance improves, but traditional fabrication methods cannot accommodate the required thickness due to temperature and fabrication boundary constraints
Solution Approach 1:
The fabrication process is segmented into independent stages: the standoff substrate is fabricated separately using processes optimized for its specific thickness and material requirements, while the active dies are fabricated using standard CMOS processes. This segmentation removes the constraint that previously required all components to be fabricated within the same temperature and process boundaries, enabling thicker substrates for better electrical performance.
Solution Approach 2:
The patent changes the fabrication parameters by decoupling the standoff substrate fabrication from the die fabrication processes. The substrate can be fabricated with different thickness parameters, material compositions, and thermal histories optimized for electrical performance, while the dies are fabricated using standard parameters. This parameter independence enables thicker substrates without being constrained by die fabrication temperature limits.
3Reliability
If high-K dielectric materials and passive components are integrated closer to the dies, then voltage regulation and RF filter performance are enhanced, but traditional packaging technologies lack the precision to achieve minimal integration distance
Solution Approach 1:
The standoff substrate serves as a precisely controllable intermediary layer that enables minimal integration distance between the active dies and passive components. The substrate thickness and positioning can be precisely controlled during fabrication, allowing high-K dielectric materials and passive components to be integrated at optimal distances for enhanced voltage regulation and RF filter performance while maintaining manufacturing feasibility.
Solution Approach 2:
The patent replaces traditional mechanical bonding and alignment methods with hybrid bonding technology that enables sub-micron alignment accuracy. This substitution allows for precise positioning of the standoff substrate and integration of passive components at minimal distances from the dies, achieving the manufacturing precision required for enhanced electrical performance.
4Reliability
If hybrid bonding technology is used to achieve sub-micron alignment accuracy and minimal die gap, then 3D stacking performance is improved, but the complexity of the bonding process increases
Solution Approach 1:
The patent applies preliminary actions by preparing the bonding surfaces of the standoff substrate and active dies in advance with specific surface treatments, alignment marks, and bonding layer deposits. This preliminary preparation enables the hybrid bonding process to achieve sub-micron alignment accuracy and minimal die gap without requiring complex real-time adjustment mechanisms during the actual bonding operation.
Data Source
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AI summary
Apparatus and methods are disclosed. In one example, a semiconductor package includes a first die that has a first surface and a first electrical lead at or near the first surface. The semiconductor package also includes a substrate that has a second surface and is coupled to the first die at a first interface. The substrate also includes a first electrode at or near the second surface and at least a first portion of an integrated passive device that is coupled to the first electrode. The first electrode is aligned with and coupled to the first electrical lead across the first interface.