Stannous Alkoxide Synthesis via Halide-Alkoxide Reaction
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Solution Overview
Problem
Current methods for producing stannous alkoxides in microelectronic device manufacturing are limited by impurity formation and require multiple reaction steps, affecting the purity and efficiency of tin-containing films in extreme-ultraviolet (EUV) lithography and other applications.
Innovation Solution
A method involving the contact of stannous halides with metal alkoxides or tin amides and alcohols to form stannous alkoxides with specific formulations, such as Sn(OR)2, in high purity (>99.9%) without forming impurities like MSn(OR)3, using single reaction steps and recrystallization processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If current methods are used to produce stannous alkoxides, then the production process can be completed, but impurity formation occurs and multiple reaction steps are required
Solution Approach 1:
The patent segments the reaction process by using specific stannous halide compounds (SnX2 where X = Cl, Br, I, F) as distinct starting materials that each react in a single step to produce high-purity stannous alkoxide, avoiding the need for multiple purification steps and intermediate reactions
Solution Approach 2:
The patent extracts and eliminates impurity-forming steps from the traditional multi-step synthesis process. By using the direct reaction between stannous halides and alkoxides, the method removes intermediate purification steps and byproduct removal operations that are characteristic of conventional approaches
2Productivity
If current methods are used to produce stannous alkoxides, then the reaction can proceed, but impurity formation occurs
Solution Approach 1:
The patent converts the potential harm of impurity formation into a benefit by selecting stannous halide starting materials and reaction conditions that inherently prevent impurity formation. The direct single-step reaction mechanism ensures that only the desired stannous alkoxide product is formed, with no side reactions generating impurities
Solution Approach 2:
The patent changes the chemical parameters of the starting materials from conventional precursors to specific stannous halides (SnX2), which have different reactivity characteristics that lead to cleaner reactions. This parameter change in the starting material composition directly eliminates impurity formation while maintaining high productivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves high-purity stannous alkoxides, enhancing the formation of tin-containing films for microelectronic devices, particularly in EUV lithography, by minimizing impurities and reducing the number of reaction steps, thereby improving the yield and quality of tin-containing films.
Implementation Method 1
contacting a stannous halide with a metal alkoxide to form a stannous alkoxide
Implementation Method 2
using single reaction steps and recrystallization processes
Data Source
AI summary
Methods for the synthesis of stannous alkoxides. Some embodiments of the method include contacting a stannous halide with a metal alkoxide to form a stannous alkoxide. Some embodiments of the method include contacting a tin amide compound with an alcohol compound to form a stannous alkoxide. Some embodiments of the method include contacting a stannous halide with at least 3 equivalents of a metal alkoxide to form a tin compound. Some embodiments of the method include contacting a stannous halide with an alcohol compound and a co-reactant base to form a stannous alkoxide.