3D Semiconductor Device with Stepped Electrode Structures
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor devices face challenges in achieving high integration density while maintaining low costs, as existing three-dimensional semiconductor devices are limited in their ability to efficiently utilize substrate regions for increased memory cell density.
Innovation Solution
The proposed three-dimensional semiconductor device features a substrate with distinct regions, including contact, dummy, and cell array regions, where electrodes and insulating layers are stacked in a pyramid-shaped structure with stepped surfaces, allowing for vertical structures to penetrate and connect with the substrate, thereby optimizing the use of space and increasing memory cell density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If electrodes are stacked vertically to increase memory cell density, then integration density is improved, but manufacturing complexity increases due to the need for precise stepwise structures and alignment
Solution Approach 1:
The substrate is divided into distinct regions (contact region, dummy region, cell array region) with different electrode configurations. The electrodes are segmented into different stepwise structures depending on the region, allowing complex 3D stacking in the cell array region while simplifying the contact and dummy regions for easier manufacturing
Solution Approach 2:
Different regions of the substrate have different electrode structures optimized for their specific functions. The cell array region has full stepwise electrode structures for maximum density, while the dummy region has simplified structures with vertically aligned sidewalls for manufacturing ease, and the contact region has structures optimized for electrical connection
2Productivity
If dummy regions are reduced to increase effective cell array area, then productivity is improved, but manufacturing precision requirements increase to maintain proper electrode alignment
Solution Approach 1:
The dummy region electrodes are configured with vertically aligned sidewalls in advance, creating a preliminary structure that guides subsequent manufacturing steps. This pre-established alignment reference reduces the precision requirements for later electrode formation in the cell array region
Solution Approach 2:
The dummy region acts as an intermediary structure that facilitates the transition from 2D substrate to 3D electrode stacking. The simplified dummy region structures serve as manufacturing aids and alignment references that enable precise formation of the more complex cell array electrodes
Data Source
AI summary
A three-dimensional semiconductor device is provided as follows. A substrate includes a contact region, a dummy region, and a cell array region. A stack structure includes electrodes vertically stacked on the substrate. The electrodes are stacked to have a first stepwise structure on the contact region and a second stepwise structure in the dummy region. Ends of at least two adjacent electrodes in the second stepwise structure have first sidewalls vertically aligned so that horizontal positions of the first sidewalls are substantially the same.