Stepped Word Line Layout for Dense Horizontal Capacitor Memory

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Solution Overview

Problem

The manufacturing of semiconductor memories with horizontally placed capacitors is challenging due to the difficulty in rearranging Bit Line (BL) and Word Line (WL) structures, which complicates the manufacturing process and increases the difficulty of achieving electrical connections with peripheral circuits.

Innovation Solution

The semiconductor structure and memory design involves arranging conductive structures above the substrate with varying lengths in steps, forming Word Lines (WLs) that are easy to manufacture and lead out, allowing for convenient formation of other structures and electrical connections with peripheral circuits.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If the capacitor is horizontally placed to increase storage density, then the storage density is improved, but the manufacturing complexity increases

Engineering Contradiction:

Improvestorage densityVSAvoidmanufacturing complexity

Core Design Contradiction:

Quantity of substanceVSDevice complexity

Solution Approach 1:

The Word Line structure is segmented into multiple conductive structures with different lengths arranged in a stepped configuration. This segmentation allows the WL to be divided into functional segments that can be independently formed and connected, simplifying the manufacturing process while maintaining the horizontal capacitor layout for high storage density

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent introduces a stepped arrangement of conductive structures in the vertical dimension (different lengths extending in the first direction), which resolves the manufacturing complexity by creating a three-dimensional layout that simplifies electrical connections while preserving the horizontal capacitor configuration for high density

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

2Reliability

If the Word Line structure is rearranged to match horizontal capacitors, then the electrical connection is improved, but the manufacturing difficulty increases

Engineering Contradiction:

Improveelectrical connectionVSAvoidmanufacturing difficulty

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The conductive structures are pre-formed with different lengths in a stepped configuration before the capacitor structures are completed. This preliminary arrangement of the Word Line structures simplifies subsequent manufacturing steps and ensures proper electrical connections are established early in the process

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

Instead of rearranging the capacitor structures to match conventional Word Line layouts, the patent inverts the approach by adapting the Word Line structure (through stepped conductive structures) to match the horizontal capacitor configuration, thereby simplifying the overall manufacturing process while ensuring proper electrical connections

Inventive Principle:

Principle #13The other way round (Inversion)

Data Source

PatentUS12490420B2Semiconductor structure and manufacturing method therefor, and memory

Publication Date: 2025.12.02 CHANGXIN MEMORY TECH INC

AI summary

A semiconductor structure includes a substrate and a conductive structure located above the substrate. The conductive structure includes a plurality of first conductive structures and second conductive structures that are spaced apart from each other and extend in a first direction. Lengths of the first conductive structures and lengths of the second conductive structures vary in steps. The lengths of the plurality of first conductive structures and the lengths of the plurality of second conductive structures vary in steps. The first conductive structures and the second conductive structures form Word Lines (WLs).