Resist Composition with Steroid Skeleton for Lithography Resolution
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Solution Overview
Problem
Current chemically amplified resist compositions for lithography techniques face limitations in achieving excellent lithography characteristics, particularly in terms of resolution and sensitivity, especially when using exposure light sources with shorter wavelengths.
Innovation Solution
A resist composition is developed that includes a base material component and an acid generator component, where the acid generator contains a compound represented by a specific formula, generating an acid upon exposure to change solubility in a developing solution, thereby improving lithography characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional chemically amplified resist compositions are used, then the basic lithography process can be maintained, but the resolution and sensitivity are insufficient for shorter wavelength exposure light sources
Solution Approach 1:
The patent modifies the chemical parameters of the resist composition by incorporating specific base materials with carboxyl groups and acid generators that produce strong acids upon exposure. This changes the solubility characteristics and chemical amplification efficiency, enabling higher resolution and sensitivity for shorter wavelength lithography while maintaining process compatibility
Solution Approach 2:
The patent creates a composite resist system combining specific base materials (polycarboxylic acid esters, polymers with carboxyl groups) with acid generators (sulfonium salts, iodonium salts). This composite approach synergistically improves both resolution and sensitivity by leveraging the complementary properties of each component for short-wavelength exposure
2Manufacturing precision
If the wavelength of exposure light source is shortened to achieve pattern miniaturization, then higher resolution is obtained, but the sensitivity of conventional resist materials decreases
Solution Approach 1:
The patent adjusts the chemical parameters of the resist by selecting base materials with appropriate glass transition temperatures and molecular weights, and acid generators with optimized quantum efficiency. This enables the resist to maintain high sensitivity while being compatible with shorter wavelength exposure sources for pattern miniaturization
Solution Approach 2:
The patent introduces functional groups with specific local properties (carboxyl groups for solubility control, aromatic rings for rigidity) at strategic positions in the polymer chains. This local optimization allows the resist to achieve both high resolution for miniaturization and high sensitivity for efficient exposure
3Ease of operation
If the polarity of base resin is increased to improve solubility in alkali developing solution, then positive type resist pattern formation is enhanced, but the solubility in organic developing solution decreases
Solution Approach 1:
The patent incorporates carboxyl groups at specific positions in the polymer structure to provide localized polarity enhancement. This allows selective improvement of alkali solubility for positive resist development while maintaining overall compositional balance for versatility across different developing conditions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition achieves enhanced lithography characteristics, including improved resolution and sensitivity, by generating an acid upon exposure, which alters the solubility of the base material component, allowing for precise pattern formation.
Implementation Method 1
an acid generator component (B) which generates an acid upon exposure
Data Source
AI summary
A resist composition containing a compound (B1) represented by Formula (b1) in which Rb1 represents a monovalent hydrocarbon group which has a steroid skeleton and 17 to 50 carbon atoms, Yb1 and Yb2 each independently represent a divalent linking group having a hetero atom, Vb1 represents a divalent linking group containing a cyclic aliphatic hydrocarbon group, Vb2 represents an alkylene group, a fluorinated alkylene group, or a single bond, Rf1 represents a hydrogen atom, a fluorine atom, or a fluorinated alkyl group having 1 to 5 carbon atoms, m represents an integer of 1 or greater, and Mm+ represents an m-valent organic cation