Storage Controller Temperature-Based Flush Control
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Solution Overview
Problem
Flash memory devices face challenges in maintaining an improved lifetime and performance due to the repetitive write booster and flush operations, which can shorten the nonvolatile memory device's lifespan without significant performance enhancement, especially in scenarios with long idle times.
Innovation Solution
Implementing a storage device with a write booster buffer and normal storage, where the storage controller writes data to the write booster buffer and selectively performs flush operations based on the device temperature, prohibiting flush operations when the temperature is within a reference range to prevent unnecessary data migration and extend the device's lifetime.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If flush operations are performed frequently to maintain performance, then write speed is improved, but device lifetime deteriorates
Solution Approach 1:
The patent changes the operational parameters by introducing temperature as a control variable. The storage controller monitors device temperature and adjusts the flush operation frequency accordingly - performing flush operations when temperature exceeds the reference threshold and suppressing them when temperature is within the reference range. This dynamic parameter adjustment resolves the contradiction by optimizing write speed based on thermal conditions while preventing excessive wear.
Solution Approach 2:
The system transitions from a static flush operation policy to a dynamic one that adapts to real-time temperature conditions. The storage controller continuously monitors temperature and adjusts flush operation behavior dynamically, enabling the system to maintain high write speed when needed while extending device lifetime by suppressing unnecessary flush operations during normal thermal conditions.
2Productivity
If write booster buffer is used to improve write performance, then data writing speed is improved, but device lifetime deteriorates due to repetitive flush operations
Solution Approach 1:
The patent introduces temperature as a controlling parameter for managing the write booster buffer. When device temperature exceeds the reference threshold, the storage controller performs flush operations to maintain buffer performance. When temperature is within the reference range, flush operations are suppressed. This parameter-based control allows the system to maintain high data writing speed through the write booster buffer while extending device lifetime by eliminating unnecessary flush operations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the frequency of flush operations and maintains performance by writing data directly to normal storage when the device is within a specific temperature range, thereby improving the storage device's lifetime and preventing unnecessary performance reductions.
Implementation Method 1
a temperature sensor that periodically measures a device temperature of the storage device
Data Source
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Figure 3
Figure 4A
AI summary
Disclosed is an operation method of a storage device which includes a write booster buffer and normal storage. The operation method includes writing first write data received from a host device in the write booster buffer, and selectively performing a flush operation on write booster buffer, in which the first write data stored in the write booster buffer are flushed to the normal storage, based on a device temperature of the storage device. Each of the memory cells included in the write booster buffer is configured to store "n" bits (n being a natural number), and each of the memory cells included in the normal storage is configured to store "m" bits (m being a natural number more than n).