Storage Controller Read Path Using Threshold Distribution Offsets
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Solution Overview
Problem
The reliability of non-volatile memory devices is compromised due to changes in threshold voltage distribution caused by factors like retention time and hot-carrier injection, leading to increased I/O load and latency in conventional storage controllers.
Innovation Solution
A storage controller method that receives read data and threshold voltage distribution information together, allowing for continuous error detection and updating of offset information in a history table to optimize read operations and reduce internal I/O load.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the storage controller separately reads distribution information to check reliability, then the reliability monitoring is improved, but the I/O load and latency increase
Solution Approach 1:
The patent combines the reading of distribution information and read data into a single I/O operation. The non-volatile memory device simultaneously outputs both the distribution information (for reliability checking) and the actual read data to the storage controller, eliminating the need for separate read operations and reducing I/O latency while maintaining reliability monitoring capabilities
2Reliability
If the storage controller performs error detection and offset updating separately, then the error correction reliability is improved, but the processing time increases
Solution Approach 1:
The patent implements continuous error detection and offset updating by processing distribution information as it arrives alongside read data. The storage controller continuously monitors the distribution information to detect errors and updates offset values in real-time without interrupting the data processing flow, maintaining high processing speed while ensuring error correction reliability
Data Source
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AI summary
Disclosed is a method of operating a storage controller which communicates with a non-volatile memory device. The method includes providing a read command to the non-volatile memory device, receiving first read data and first distribution information corresponding to the read command from the non-volatile memory device, determining whether an error of the first read data is uncorrectable, and updating offset information of a history table in the storage controller based on the first distribution information, in response to determining that the error of the first read data is correctable.