Storage Device Standard Potential Control via Reference Selection
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Solution Overview
Problem
Existing storage devices face challenges in flexibly controlling the standard potential for reading data due to the need to manage a current source, which limits the ability to adjust the standard potential according to the state of the storage device.
Innovation Solution
A storage device that includes a group of data memory cells, reference memory cells for storing reference potentials, a standard potential generating section, and a reference potential selection control section that uses sensors to adjust the standard potential based on physical conditions such as temperature, voltage, or magnetic force, allowing for flexible setting of the standard potential.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If temperature compensation is performed by changing current supplied to cell array, then reading accuracy is improved, but control flexibility of standard potential deteriorates
Solution Approach 1:
The patent divides the reference potential control into separate reference memory cells that store different reference potentials (e.g., first reference potential and second reference potential). Instead of controlling the entire current source, the system selectively reads out specific reference potentials based on temperature conditions, achieving segmented control for improved flexibility.
Solution Approach 2:
The patent implements dynamic selection of reference potentials based on temperature conditions. A temperature sensor detects temperature changes and the control circuit dynamically switches between different reference potentials stored in reference memory cells, allowing the standard potential to adapt dynamically to environmental conditions without redesigning the current source control.
2Device complexity
If average potential is used as standard potential, then circuit simplicity is maintained, but adaptability to different storage device states deteriorates
Solution Approach 1:
The patent pre-stores multiple reference potentials in reference memory cells during device fabrication or initialization. These pre-prepared reference potentials correspond to different operating conditions (temperature ranges, device states). When operation begins, the system simply selects from these pre-stored values based on current conditions, avoiding complex real-time calculations while maintaining adaptability.
Solution Approach 2:
The patent changes the parameter of reference potential values based on detected temperature conditions. Instead of using a fixed average potential, the system adjusts the reference potential parameter to match current operating conditions by selecting from pre-stored values, thereby improving adaptability without significantly increasing circuit complexity.
3Measurement precision
If multiple reference potentials are stored and selected based on temperature, then standard potential accuracy is improved, but device complexity increases
Solution Approach 1:
The patent uses the same reference memory cell structure and selection circuitry for multiple purposes: storing reference potentials, detecting temperature conditions, and selecting appropriate reference potentials. This multi-functional approach allows the system to achieve improved accuracy through multiple reference potentials without proportionally increasing overall device complexity.
Solution Approach 2:
The patent introduces a control circuit as an intermediary between the temperature sensor and the reference memory cells. This control circuit simplifies the selection process by automatically choosing the appropriate reference potential based on temperature conditions, thereby reducing the complexity burden that would otherwise fall on the main control logic while still achieving improved accuracy.
Data Source
AI summary
A standard potential used for reading is set flexibly according to the state of a storage device. A data memory cell group stores data. A reference memory cell group stores a plurality of reference potentials. A standard potential generating section selects a prescribed number of reference potentials from among the plurality of reference potentials stored in the reference memory cell group and generates the standard potential. A reference potential selection control section controls the selection by the standard potential generating section according to prescribed conditions. A sense amplifier amplifies data read out from the data memory cell group, by using the standard potential as a standard.