Semiconductor Storage Gate Layout for Narrower Transistor Isolation
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Solution Overview
Problem
Current semiconductor storage devices face challenges in achieving high integration density and efficient manufacturing processes, particularly in narrowing the distance between transistors, which affects the integration property and area utilization in circuit areas.
Innovation Solution
The semiconductor storage device incorporates an insulating layer with protrusion portions over gate electrodes, allowing for narrower element isolation areas and improved processing margins, enabling closer transistor placement and enhanced integration density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If element isolation areas are narrowed to increase transistor density, then integration density is improved, but processing margins are reduced and manufacturing precision becomes difficult to maintain
Solution Approach 1:
The insulating layer is extended vertically above the gate electrodes to form protrusion portions, utilizing the vertical dimension to provide additional isolation. This allows the horizontal element isolation area to be narrowed while the vertical protrusion portions maintain adequate processing margins and prevent short circuits between adjacent transistors.
2Area of stationary object
If transistors are placed closer together to reduce circuit area, then integration property is improved, but manufacturing complexity increases
Solution Approach 1:
The insulating layer is segmented to form discrete protrusion portions above each gate electrode. This segmentation provides individual isolation structures for each transistor, enabling closer placement while maintaining manufacturing simplicity through a systematic, repeatable pattern that can be implemented using standard semiconductor fabrication processes.
Data Source
AI summary
A device includes a semiconductor substrate including a first well region and a second well region; a first transistor including a first gate insulating layer provided above the first well region, a first gate electrode having a semiconductor, and a second gate electrode having a metal; a second transistor including a second gate insulating layer provided above the second well region, a third gate electrode having a semiconductor, and a fourth gate electrode having a metal; an element isolation area disposed between the first and second well regions; and a first insulating layer formed above the element isolation area. The first insulating layer has a first portion extending over the first gate electrode and a second portion extending over the third gate electrode, a portion of the second gate electrode is formed above the first portion, and a portion of the fourth gate electrode is formed above the second portion.