Memory Subsystem Read Calibration Using Stored Write Temperature
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Solution Overview
Problem
Existing memory devices face reliability issues due to cross-temperature effects, which cause bit flip errors and increased error rates, leading to reduced data retention and increased latency and complexity in error correction operations.
Innovation Solution
The memory device stores the write temperature along with the data and uses this information to adjust read operation parameters, compensating for cross-temperature variations to reduce errors and latency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If cross-temperature compensation is implemented by storing write temperature and adjusting read parameters, then reliability is improved, but device complexity increases
Solution Approach 1:
The patent applies preliminary action by storing the write temperature information together with the data during the write operation. This pre-stored temperature information is then used during read operations to determine appropriate read voltage offsets, eliminating the need for complex real-time temperature sensing and calculation during reads, thus improving reliability while controlling complexity.
Solution Approach 2:
The patent changes the read voltage offset parameter based on the stored write temperature and current read temperature. By adjusting this electrical parameter dynamically according to temperature conditions, the system compensates for cross-temperature effects and improves data retrieval reliability without requiring fundamental architectural changes.
2Reliability
If cross-temperature compensation is implemented by storing write temperature and adjusting read parameters, then reliability is improved, but latency increases
Solution Approach 1:
By pre-storing the write temperature information with the data, the patent eliminates the need for complex real-time temperature sensing and calculation during read operations. The controller can directly use the stored temperature information to determine the appropriate read voltage offset, reducing computational overhead and latency while maintaining improved reliability.
3Manufacturing precision
If read voltage offset is adjusted based on temperature information, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The patent stores the write temperature information during the write operation, creating a preliminary record that eliminates the need for complex real-time temperature sensing and tracking during read operations. This pre-captured temperature data simplifies the overall system architecture while enabling precise read voltage offset adjustments.
Data Source
AI summary
Control logic in a memory device receives, from a requestor, a request to read data from the memory array, the request comprising an indication of a segment of the memory array where the data is stored and performs, using previously configured read operation parameters, a first read operation to read the data and a write temperature associated with the data from the memory array. The control logic determines whether the previously configured read operation parameters satisfy a temperature criterion and responsive to determining that the previously configured read operation parameters do not satisfy the temperature criterion, configures the memory device with updated read operation parameters, and performs, using the updated read operation parameters, a second read operation to read the data from the memory array.